Atomic Layer Deposition (ALD) is used for depositing thin (<50nm) films that are highly conformal. Most of the films deposited are metal oxides, although we do have Pt and Ru metal films available as well. We have both thermal only systems and plasma-assisted sytems available for labmembers to use. 

A couple of useful links that help navigate ALD research in general (not specific to the SNF) are:

  • www.plasma-ald.com: a website created by Dr. Mark Sowa that has a survey of plasma ALD literature
  • www.atomiclimits.com: a website created by Professor Erwin Kessels, Eindhoven University, that provides a dynamic discussion of the ALD landscape.
Processing Technique Equipment name & NEMO ID Cleanliness Materials Lab Supplied Material Thickness Range Substrate Size Process Temperature Range Gases Notes Stylus Tip Radius
Plasma Enhanced (PE) ALD Fiji 1 ALD
fiji1 		Semiclean
1.00 Å - 50.00 nm
24 °C - 350 °C
Plasma Enhanced (PE) ALD Fiji 2 ALD
fiji2 		Flexible
1.00 Å - 50.00 nm
24 °C - 350 °C
Plasma Enhanced (PE) ALD Fiji 3 ALD
fiji3 		Flexible
1.00 Å - 50.00 nm
24 °C - 350 °C

Restricted to non-conductive films only
Thermal ALD MVD
mvd 		Flexible
1.00 Å - 50.00 nm
24 °C - 150 °C

Reactor located inside glovebox
Thermal ALD Savannah ALD
savannah 		Flexible
1.00 Å - 50.00 nm
24 °C - 250 °C