Dry resist removal, called Ashing, uses O2 plasma to react with the resist to remove it from the substrate.
The asher you will need will depend on the materials on your substrate as well as your substrate itself in addition cleanliness category of your sample. (For more about the cleanliness categories, please visit the Cleanliness (previously Contamination) Groups page).
| Processing Technique | Equipment name & NEMO ID | Cleanliness | Primary Materials Etched | Other Materials Etched | Substrate Size | Maximum Load (number of wafers) | Process Temperature Range | Gases | Notes | Stylus Tip Radius |
|---|---|---|---|---|---|---|---|---|---|---|
| Downstream/Remote Plasma Resist Removal, Downstream/Remote Plasma Etching |
Gasonics Aura Asher gasonics |
Clean, Semiclean | 25 |
Single wafer tool with auto loading from a cassette. Pieces need a pocket carrier wafer for transport. Wafers heated by lamps. |
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| Downstream/Remote Plasma Resist Removal, Downstream/Remote Plasma Etching |
Matrix Plasma Resist Strip matrix |
Flexible | 25 |
Single wafer tool with auto loading from a cassette. Pieces need a pocket carrier wafer for transport. Chuck temperature controls wafer heating. |
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| Plasma Mode Etching, Reactive Ion Etching (RIE), Downstream/Remote Plasma Resist Removal |
Samco PC300 Plasma Etch System samco |
Flexible | Four 4" wafers or two 6" wafers and one 8" wafer |
20 ºC
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| Dry Resist Removal, Dry Etching |
Technics Asher technics |
Flexible | Four 4" wafers to pieces, one 6" or 8" wafer |