MOCVD is a chemical vapour deposition method using metal organics to produce single- or polycrystalline thin films. It is a process for growing crystalline layers to create complex semiconductor multilayer structures.

Processing Technique Equipment name & NEMO ID Cleanliness Materials Lab Supplied Material Thickness Range Substrate Size Maximum Load (number of wafers) Process Temperature Range Gases Cleaning Required Notes Stylus Tip Radius
Metal-Organic (MO) CVD Aixtron MOCVD - III-N system
aix-ccs 		Clean (MOCVD)
0.00 - 5.00 μm
4"x1, 2"X3, pieces
400 °C - 1300 °C

N and P doping available. For Si clean: SC1, SC2, HF dip. For Sapphire clean: SC1, SC2. For GaN template on Si or Sapphire: Piranha, SC1, SC2.
Metal-Organic (MO) CVD Aixtron MOCVD - III-V system
aix200 		Flexible
0.00 - 5.00 μm
4"x1 wafer or 2"x1 wafer or 4 pieces
300 °C - 800 °C
Pre-Diffusion Clean

N and P doping available. For Si clean: SC1, SC2, HF dip. For III-V clean: HCl or HF dip.