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Chemical Vapor Deposition (CVD)

Chemical Vapor Deposition, CVD, is a process by which films are deposited onto a substrate by the reaction between precursors at elevated temepratures and at atmomospheric or lower pressures.  Volatile precursors or their by-products are absorbed and react at the wafer surface to produce the desired films.  The  characteristics of the deposited film such as crystalinty, composition, quality, etc. are dependent on deposition conditions.  Films typically deposited using CVD processes are, but not limited to - silicon based compounds such as silicon, silicon dioxide, silicon nitride, slicon carbide, some Germanium based films and carbon based compounds. If the deposition occurs at atmospheric pressure, then the process is referred to as APCVD and if the process pressure is lower, it is LPCVD.  

Technique Tabs

Main Tab
Processing Techniques Equipment name & NEMO ID Teaser Blurb Cleanliness Location
Graphene CVD Growth Aixtron Black Magic graphene CVD furnace
aixtron-graphene
Flexible SNF Exfab Paul G Allen L119 Año Nuevo
Metal-Organic (MO) CVD Aixtron MOCVD - III-N system
aix-ccs

Aixtron MOCVD for III-N semiconductors: InN, GaN, AlN, InGaN, InAlN, AlGaN, InGaAlN. Aix-ccs is a vertical metal organic chemical vapor deposition (MOCVD) system.

Clean (MOCVD) SNF MOCVD Paul G Allen 213XA
Metal-Organic (MO) CVD Aixtron MOCVD - III-V system
aix200
Flexible SNF MOCVD Paul G Allen 213XA
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD AMAT Centurion Epitaxial System
epi2

Deposit epitaxial and polycrystalline silicon, germanium and silicon-germanium films.

Clean SNF Cleanroom Paul G Allen L107
Carbon Nanotube CVD Growth First Nano carbon nanotube CVD furnace
cvd-nanotube
Flexible SNF Exfab Paul G Allen L119 Año Nuevo
Plasma Enhanced (PE) CVD PlasmaTherm Shuttlelock PECVD System
ccp-dep

The Plasma-Therm Shuttlelock PECVD (CCP-Dep) system is used for depositing low-stress silicon nitride, silicon dioxide, amorphous and silicon carbide, and silicon oxynitride layers on 4 inch wafers.

All SNF Cleanroom Paul G Allen L107
Plasma Enhanced (PE) CVD PlasmaTherm Versaline HDP CVD System
hdpcvd

High Density Plasma Enhanced Chemical Vapor Deposition (HD PECVD) system is used to deposit silicon dioxide, silicon nitride and amorphous silicon.

All SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD Tystar Bank 1 Tube 3 Poly
B1T3 Flexible Poly

LPCVD of Poly silicon, Amorphous Silicon, Doped Silicon, Silicon-Germanium.

Flexible SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD Tystar Bank 1 Tube 4 LTO
B1T4 Flexible LTO

LPCVD of  Low Temperatur Oxide, PSG, BSG, BPSG.

Flexible SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD Tystar Bank 2 Tube 7 Nitride
B2T7 Clean Nitride

LPCVD of Stoichiometric silicon nitride, low-stress silicon nitride, Silicon Oxy Nitride.

Clean SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD Tystar Bank 2 Tube 8 LTO
B2T8 Clean LTO

LPCVD of  Low Temperatur Oxide, PSG, BSG, BPSG.

Clean SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD Tystar Bank 3 Tube 10 Nitride
B3T10 Clean Nitride

LPCVD of Silicon Nitride, Stoichiometric silicon nitride, low-stress silicon nitride, Silicon Oxy Nitride.

Clean SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD Tystar Bank 3 Tube 11 TEOS
B3T11 Clean TEOS

LPCVD of TEOS Oxide.

Clean SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD Tystar Bank 3 Tube 12 Poly
B3T12 Clean Poly

LPCVD of Poly silicon, Amorphous Silicon, Doped Silicon.

Clean SNF Cleanroom Paul G Allen L107
Detail Tab
Processing Technique Equipment name & NEMO ID Cleanliness Materials Lab Supplied Material Thickness Range Substrate Size Maximum Load (number of wafers) Process Temperature Range Gases Cleaning Required Notes
Graphene CVD Growth Aixtron Black Magic graphene CVD furnace
aixtron-graphene
Flexible
1x4" wafer or Copper/Nickel foil
800 °C - 1100 °C
Metal-Organic (MO) CVD Aixtron MOCVD - III-N system
aix-ccs
Clean (MOCVD)
0.00 - 5.00 μm
4"x1, 2"X3, pieces
400 °C - 1300 °C

N and P doping available.
For Si clean: SC1, SC2, HF dip.
For Sapphire clean: SC1, SC2.
For GaN template on Si or Sapphire: Piranha, SC1, SC2.

Metal-Organic (MO) CVD Aixtron MOCVD - III-V system
aix200
Flexible
0.00 - 5.00 μm
4"x1 wafer or 2"x1 wafer or 4 pieces
300 °C - 800 °C
Pre-Diffusion Clean

N and P doping available.
For Si clean: SC1, SC2, HF dip.
For III-V clean: HCl or HF dip.

EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD AMAT Centurion Epitaxial System
epi2
Clean
50.00 Å - 3.00 μm
1
600 °C - 1200 °C
Pre-Diffusion Clean

N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr

Carbon Nanotube CVD Growth First Nano carbon nanotube CVD furnace
cvd-nanotube
Flexible
1x4" wafer or multiple pieces
800 °C - 1100 °C

Aligned single-walled carbon nanotube growth with ST-cut quartz substrates (available from SNF stockroom);1-15 single-walled carbon nanotubes per micron density

Plasma Enhanced (PE) CVD PlasmaTherm Shuttlelock PECVD System
ccp-dep
All
100.00 Å - 4.00 μm
4
100 °C - 350 °C

To maintain cleanliness level, cleans of both the chamber and wafers are required prior to processing -

Substrates in clean category: Pre-Diffusion Clean

For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) . Run Chamber clean (no dummies) and conditioning with clean dummies prior to run

Plasma Enhanced (PE) CVD PlasmaTherm Versaline HDP CVD System
hdpcvd
All
500.00 Å - 4.00 μm
1
50 °C - 150 °C

To maintain cleanliness level there are cleans required for both the chamber and wafers prior to processing -

Substrates in clean category: Pre-Diffusion Clean

For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) .  Run Chamber clean (no dummies) and conditioning with clean dummies prior to run

Low Pressure (LP) CVD Tystar Bank 1 Tube 3 Poly
B1T3 Flexible Poly
Flexible
25.00 Å - 2.00 μm
100
420 °C - 630 °C
Low Pressure (LP) CVD Tystar Bank 1 Tube 4 LTO
B1T4 Flexible LTO
Flexible
25.00 Å - 2.00 μm
100
300 °C - 500 °C
Low Pressure (LP) CVD Tystar Bank 2 Tube 7 Nitride
B2T7 Clean Nitride
Clean
25.00 Å - 2.00 μm
50
420 °C - 800 °C
Pre-Diffusion Clean
Low Pressure (LP) CVD Tystar Bank 2 Tube 8 LTO
B2T8 Clean LTO
Clean
25.00 Å - 2.00 μm
100
300 °C - 500 °C
Low Pressure (LP) CVD Tystar Bank 3 Tube 10 Nitride
B3T10 Clean Nitride
Clean
25.00 Å - 2.00 μm
50
420 °C - 800 °C
Pre-Diffusion Clean
Low Pressure (LP) CVD Tystar Bank 3 Tube 11 TEOS
B3T11 Clean TEOS
Clean
25.00 Å - 2.00 μm
50
420 °C - 630 °C
Pre-Diffusion Clean
Low Pressure (LP) CVD Tystar Bank 3 Tube 12 Poly
B3T12 Clean Poly
Clean
25.00 Å - 2.00 μm
50
420 °C - 630 °C
Pre-Diffusion Clean
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