Aixtron MOCVD - III-V system (aix200)
Overview
Aixtron MOCVD for III-V and dilute nitride semiconductors: InAs, GaAs, AlAs, InP, GaP, AlP, InGaAs, AlGaAs, InGaP, InGaAsN, InPN, et al.
Aix200 is a horizontal metal organic chemical vapor deposition (MOCVD) system from Aixtron. It is a III-V-N system with the model of Aixtron 200/4. It is categorized as contaminated tool in general but divided into a "non-gold period" for the first couple of months after each reactor cleaning, and a "gold contaminated period" for extended experiments requirement in the next couple of months. The system can accommodate pieces, one 2-inch wafer, or one 4-inch wafer.
What the Tool CAN do
- Deposit III-V films (single crystal, polycrystal and quasi-amorphous), heterostructures, and nanowires
- Dilute nitride of III-V materials
- P-type and n-type doping
- Tightly controlled thickness from sub-nm to several micron
Cleanliness:
Processing Technique(s)
Capabilities and Specifications
Cleaning Required:
Pre-Diffusion Clean
Lab Supplied Materials
Material Thickness Range: 0.0 - 5.0 μm
Process Temperature Range:
300 °C - 800 °C
Gases
Substrate Type
Substrate Sizes
Maximum Load:
4"x1 wafer or 2"x1 wafer or 4 pieces
Notes:
N and P doping available.
For Si clean: SC1, SC2, HF dip.
For III-V clean: HCl or HF dip.
Lab Organization, Location, and NEMO Information
Training and Maintenance
Lab Facility:
Training Charges:
4.00 hours
Primary Trainer:
Backup Trainer(s):
Primary Maintenance:
Backup Maintenance:
Steps to become a tool user
-
Become a member of SNF.
- Study the relevant operating procedures:
- Contact the primary trainer: Chloe Goings
