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Characterization (link to Processing Techniques)
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Materials
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Silicon Carbide
Chemical Formula:
SiC
Silicon carbide can deposited in the ccp system by the reaction between silane and methane.
Equipment Tabs
Deposition Equipment
Equipment name or Badger ID
Partial words okay.
Deposition Equipment
Equipment name & Badger ID
Cleanliness
Location
Material Thickness Range
Approved Materials supplied by Lab
PlasmaTherm Shuttlelock PECVD System
ccp-dep
All
SNF Cleanroom Paul G Allen L107
100.00 Å
-
4.00 μm
Si
Si3N4
SiC
SiO
2
SiON
PlasmaTherm Versaline HDP CVD System
hdpcvd
All
SNF Cleanroom Paul G Allen L107
500.00 Å
-
4.00 μm
Si
Si3N4
SiC
SiO
2
SiON
Etching Equipment
Equipment name or Badger ID
Partial words okay.
Etch Equipment
Equipment name & Badger ID
Cleanliness
Location
Primary Materials Etched
Other Materials Etched
AMAT P5000 Etcher
p5000etch
Clean
Clean (Ge)
Semiclean
SNF Cleanroom Paul G Allen L107
Si
Si3N4
SiGe
SiO
2
SiON
C
C
C
dimethylpolysiloxane
poly(p-xylylene)
SiC
Ti
Various C-based
W
WSi
2
PI
Resist
Ti Tungsten
Oxford Dielectric Etcher
oxford-rie
Flexible
SNF Cleanroom Paul G Allen L107
Si3N4
SiC
SiO
2
PI
C
Plasma Therm Versaline LL ICP Dielectric Etcher
PT-Ox
Flexible
SNF Cleanroom Paul G Allen L107
C
Si3N4
SiC
SiO
2
Various C-based
Projects
Bulk Silicon Carbide Etching in PT-MTL- Final Report
-- (Report)