Doping is a technique that introduces impurities into materials in order to change it's properties.
| Processing Technique | Equipment name & NEMO ID | Cleanliness | Materials Lab Supplied | Material Thickness Range | Substrate Size | Maximum Load (number of wafers) | Process Temperature Range | Gases | Cleaning Required | Notes | Stylus Tip Radius |
|---|---|---|---|---|---|---|---|---|---|---|---|
| EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD |
AMAT Centurion Epitaxial System epi2 |
Clean |
50.00 Å -
3.00 μm
|
1 |
600 °C - 1200 °C
|
Pre-Diffusion Clean |
N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr |