Plasma mode etching is a form of capacitively coupled plasma etching wherein the substrate is sitting on a grounded electrode as opposed to the powered electrode. The bias voltage at the wafer level is much lower in this mode and hence is the preferred option for damage free etching of thin films. In plasma mode etching, the two electodes are roughly of the same size.
| Processing Technique | Equipment name & NEMO ID | Cleanliness | Primary Materials Etched | Other Materials Etched | Substrate Size | Maximum Load (number of wafers) | Process Temperature Range | Gases | Stylus Tip Radius |
|---|---|---|---|---|---|---|---|---|---|
| Plasma Mode Etching, Reactive Ion Etching (RIE), Downstream/Remote Plasma Resist Removal |
Samco PC300 Plasma Etch System samco |
Flexible | Four 4" wafers or two 6" wafers and one 8" wafer |
20 ºC
|