Silicon Germanium

Chemical Formula:

SiGe

Equipment name & NEMO ID	Training Required & Charges	Cleanliness	Location	Notes
Samco PC300 Plasma Etch System samco	Samco Training	Flexible	SNF Cleanroom Paul G Allen L107
Savannah ALD savannah	ALD Savannah Training	Flexible	SNF Cleanroom Paul G Allen L107
SEM -Zeiss Merlin sem-merlin	SEM-Merlin Training	All	SNF Exfab Paul G Allen 104 Stinson
Sensofar S-neox s-neox	Sensofar S-neox Training	All	SNF Cleanroom Paul G Allen L107	non contact 3D optical profiling
SPTS uetch vapor etch uetch	SPTS uetch vapor etch Training	All	SNF Cleanroom Paul G Allen L107	Pieces need a carrier wafer; Isotropic Etching
SVG Develop Track 1 svgdev	SVG Resist Develop tracks 1 and 2 Training	All	SNF Cleanroom Paul G Allen L107	Automatic development.
SVG Develop Track 2 svgdev2	SVG Resist Develop tracks 1 and 2 Training	All	SNF Cleanroom Paul G Allen L107	Automatic development.
SVG Resist Coat Track 1 svgcoat	SVG Resist Coat Tracks 1 and 2 Training	All	SNF Cleanroom Paul G Allen L107	Automatic Resist spinning and bake
SVG Resist Coat Track 2 svgcoat2	SVG Resist Coat Tracks 1 and 2 Training	All	SNF Cleanroom Paul G Allen L107	Automatic HMDS, Resist spinning, and Bake. AZ5214IR Image Reversal.
Tencor P2 Profilometer p2	Tencor P2 Profilometer Training	Clean, Semiclean	SNF Cleanroom Paul G Allen L107	Step height measurement range 500 Å to 80 µm
Tystar Bank 1 Tube 1 B1T1 Flexible Oxide	Tystar Atmospheric Tube Training	Flexible	SNF Cleanroom Paul G Allen L107
Tystar Bank 1 Tube 2 B1T2 Flexible Oxide Anneal	Tystar Atmospheric Tube Training	Flexible	SNF Cleanroom Paul G Allen L107
Tystar Bank 1 Tube 3 Poly B1T3 Flexible Poly	Tystar LPCVD Tube Training	Flexible	SNF Cleanroom Paul G Allen L107
Tystar Bank 1 Tube 4 LTO B1T4 Flexible LTO	Tystar LPCVD Tube Training	Flexible	SNF Cleanroom Paul G Allen L107
Tystar Bank 2 Tube 5 B2T5 Clean Oxide Anneal	Tystar Atmospheric Tube Training	Clean	SNF Cleanroom Paul G Allen L107
Tystar Bank 2 Tube 6 B2T6 Clean Oxide	Tystar Atmospheric Tube Training	Clean	SNF Cleanroom Paul G Allen L107
Tystar Bank 2 Tube 7 Nitride B2T7 Clean Nitride	Tystar LPCVD Tube Training	Clean	SNF Cleanroom Paul G Allen L107
Tystar Bank 2 Tube 8 LTO B2T8 Clean LTO	Tystar LPCVD Tube Training	Clean	SNF Cleanroom Paul G Allen L107
Tystar Bank 3 Tube 10 Nitride B3T10 Clean Nitride	Tystar LPCVD Tube Training	Clean	SNF Cleanroom Paul G Allen L107
Tystar Bank 3 Tube 11 TEOS B3T11 Clean TEOS	Tystar LPCVD Tube Training	Clean	SNF Cleanroom Paul G Allen L107

Pages

Equipment name & NEMO ID	Technique	Cleaning Required	Cleanliness	Primary Materials Etched	Other Materials Etched	Material Thickness Range	Materials Lab Supplied	Resist	Developer	Process Temperature Range	Gases	Sample Size Limits	Substrate Size	Substrate Type	Maximum Load
Samco PC300 Plasma Etch System samco	Cleaning > Resist Removal > Dry Resist Removal > Downstream/Remote Plasma Resist Removal Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Plasma Mode Etching Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE)		Flexible	Resist	dimethylpolysiloxane Si Si3N4 SiO₂ SiON Various polymers PI					20 ºC	CF₄ O₂ SF₆		Pieces 2" 3" 4" 6" 8" Other	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb) , (Various)	Four 4" wafers or two 6" wafers and one 8" wafer
Savannah ALD savannah	Deposition > Atomic Layer Deposition (ALD) > Thermal ALD		Flexible			1.00 Å - 50.00 nm	Metal oxides Ga₂O₃ SnO₂ Various Dielectrics ZnO₃ Alumina AZO Hafnia Titania Zirconia			24 °C - 250 °C	N₂		Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (Various) , (Various) , (LiNb) , (Various)
SEM -Zeiss Merlin sem-merlin	Characterization > Surface Analysis > Microscopy		All			0.00 mm - 35.00 mm						6 in wafer	Pieces 2" 3" 4" 6" Disks	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (LiNb)
Sensofar S-neox s-neox	Characterization > Surface Analysis > Profilometer > Interferometry Characterization > Surface Analysis > Profilometer > Optical Profilometer		All										Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1
SPTS uetch vapor etch uetch	Etching > Vapor Etching		All	SiO₂							C₂H₅OH HF vapor		Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	1
SVG Develop Track 1 svgdev	Photolithography > Resist Develop > Resist Develop (automatic)		All						MF-26A developer				4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	25 4 inch wafers
SVG Develop Track 2 svgdev2	Photolithography > Resist Develop > Resist Develop (automatic)		All						MF-26A developer				4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	25 4 inch wafers
SVG Resist Coat Track 1 svgcoat	Photolithography > Resist coat > Resist Coat (automatic)		All					Shipley 3612 resist SPR220-3 resist SPR220-7					4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	25 4 inch wafers
SVG Resist Coat Track 2 svgcoat2	Photolithography > Resist coat > Resist Coat (automatic)		All					AZ5214IR Shipley 3612 resist SPR 955 CM-.7 resist					4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	25 4 inch wafers
Tencor P2 Profilometer p2	Characterization > Surface Analysis > Profilometer > Step Profile		Clean, Semiclean										Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1
Tystar Bank 1 Tube 1 B1T1 Flexible Oxide	Annealing & Oxidation > Oxide Growth (furnace)		Flexible			25.00 Å - 2.00 μm				400 °C - 1100 °C	4% H₂ in N₂ N₂ O₂		4" 6"	(Si) , (SiGe) , (SiO2)	100
Tystar Bank 1 Tube 2 B1T2 Flexible Oxide Anneal	Annealing & Oxidation > Annealing (furnace) Annealing & Oxidation > Oxide Growth (furnace)		Flexible			25.00 Å - 2.00 μm				400 °C - 1100 °C	4% H₂ in N₂ N₂ O₂		4" 6"	(Si) , (SiGe) , (SiO2)	100
Tystar Bank 1 Tube 3 Poly B1T3 Flexible Poly	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD		Flexible			25.00 Å - 2.00 μm				420 °C - 630 °C	B₂H₆ GeH₄ N₂ PH₃ SiH₄		4" 6"	(Si) , (SiGe) , (SiO2) , (Ge) , (SiC) , (III-V)	100
Tystar Bank 1 Tube 4 LTO B1T4 Flexible LTO	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD		Flexible			25.00 Å - 2.00 μm				300 °C - 500 °C	N₂ O₂ PH₃ SiH₄		4" 6"	(Si) , (SiGe) , (SiO2) , (Ge) , (SiC) , (III-V)	100
Tystar Bank 2 Tube 5 B2T5 Clean Oxide Anneal	Annealing & Oxidation > Oxide Growth (furnace)	Pre-Diffusion Clean	Clean			25.00 Å - 2.00 μm				400 °C - 1100 °C	4% H₂ in N₂ N₂ O₂		4" 6"	(Si) , (SiGe) , (SiO2)	100
Tystar Bank 2 Tube 6 B2T6 Clean Oxide	Annealing & Oxidation > Oxide Growth (furnace)	Pre-Diffusion Clean	Clean			25.00 Å - 2.00 μm				400 °C - 1100 °C	4% H₂ in N₂ N₂ O₂		4" 6"	(Si) , (SiGe) , (SiO2)	100
Tystar Bank 2 Tube 7 Nitride B2T7 Clean Nitride	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD	Pre-Diffusion Clean	Clean			25.00 Å - 2.00 μm				420 °C - 800 °C	NH₃ DCS		4" 6"	(Si) , (SiGe) , (SiO2)	50
Tystar Bank 2 Tube 8 LTO B2T8 Clean LTO	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD		Clean			25.00 Å - 2.00 μm				300 °C - 500 °C	N₂ O₂ PH₃ SiH₄		4" 6"	(Si) , (SiGe) , (SiO2)	100
Tystar Bank 3 Tube 10 Nitride B3T10 Clean Nitride	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD	Pre-Diffusion Clean	Clean			25.00 Å - 2.00 μm				420 °C - 800 °C	NH₃ DCS		4" 6"	(Si) , (SiGe) , (SiO2)	50
Tystar Bank 3 Tube 11 TEOS B3T11 Clean TEOS	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD	Pre-Diffusion Clean	Clean			25.00 Å - 2.00 μm				420 °C - 630 °C	N₂ O₂ Si(OC₂H₅)₄		4" 6"	(Si) , (SiGe) , (SiO2)	50