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Stanford Nanofabrication Facility
Lab User Guide

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SNF: Rapid Thermal Processing

Equipment Tables

  • Summary
  • Specifications
Equipment name & NEMO ID Technique Cleaning Required Cleanliness Process Temperature Range Gases Substrate Size Substrate Type Maximum Load
RTA AllWin 610
aw610_l
  • Annealing & Oxidation > Rapid Thermal Annealing
Pre-Diffusion Clean Clean
21 °C - 1150 °C
  • 4% H2 in N2
  • Ar
  • N2
  • NH3
  • O2
  • Pieces
  • 2"
  • 3"
  • 4"
  • 6"

  • Silicon (Si)

  • Silicon Germanium (SiGe)

  • Quartz (SiO2)

 1 wafer
RTA AllWin 610
aw610_r
  • Annealing & Oxidation > Rapid Thermal Annealing
Flexible
21 °C - 1150 °C
  • 4% H2 in N2
  • Ar
  • N2
  • NH3
  • O2
  • Pieces
  • 2"
  • 3"
  • 4"
  • 6"

  • Silicon (Si)

  • Silicon Germanium (SiGe)

  • Quartz (SiO2)
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