Skip to content Skip to navigation

Aluminum Gallium Nitride

Chemical Formula: 
AlGaN

AlGaN is an alloy material made of Aluminum Nitride (AlN) and Gallium Nitride (GaN). It is a semiconductor material that is used in making lasers, LEDs, UV detectors, and HEMTs (High Electron Mobility Transistors). 

Equipment Tabs

Deposition Equipment
Partial words okay.
Deposition Equipment
Equipment name & Badger ID Cleanliness Locationsort descending Material Thickness Range Approved Materials supplied by Lab
Aixtron MOCVD - III-N system
aix-ccs
SNF MOCVD Paul G Allen 213XA
0.00 - 5.00 μm
Projects
Community Service Extension Request: P-GaN/AlGAN/GaN E-mode HEMT -- (Report)
Community Service P-GaN/AlGAN/GaN E-mode HEMT Project Proposal -- (Report)
Community Service Project P-GaN/AlGAN/GaN E-mode HEMT- Final Report -- (Report)
Development of Thin Film Release of GaN using AlN and AlGaN Buffer Layers for MEMS Applications- Final Report -- (Report)
Development of Thin Film Release of GaN using AlN and AlGaN Buffer layers for MEMs Applications- Final Presentation -- (Presentation)
Community Service P-GaN/AlGAN/GaN E-mode HEMT
Improve the performance of MOCVD grown GaN-on-Si HEMT structure
MOCVD Regrown Ohmic Contacts to AlGaN/GaN Heterostructures
MOCVD Regrown Ohmic Contacts to AlGaN/GaN Heterostructures- Community Service
Subscribe to