Fluoroform | Stanford Nanofabrication Facility

Chemical Formula:

CHF₃

Etch Equipment
Equipment name & NEMO ID	Cleanliness	Location	Primary Materials Etched	Other Materials Etched	Gases
MRC Reactive Ion Etcher mrc	Flexible	SNF Paul G Allen L107 Cleanroom	Metal oxides Metals Metals or metal compounds with volatile byproducts Metals or metal compounds without volatile byproducts Au Ni poly(p-xylylene) Pt Si Si3N4 SiO₂ Ti Various 2D Materials Various Dielectrics Various polymers PI Resist	Al AlAs AlGaAs AlGaN AlInP AlN AlSi BiFeO₃ C C C Co CoFeB Cr Cu Er Fe Ga₂O₃ GaAs GaN GaP GaPN Ge Hf HfN III-N materials III-V materials In In₂O₃ InAlN InAs InGaAlN InGaAs InGaAsN InGaN InGaP InN InP InPN InSb Ir LaB₆ LiNb Nb Ni_xO_y NiSi Pd Ru Sc SiC SiGe SiO SiON Sn SnO₂ SrO SrRuO Ta Ta₂O₅ TaN TiN V Various C-based Various polymers W WO₃ WSi₂ Y ZnO₃ Zr ZrY Alumina AZO Hafnia ITO LLZO Moly Moly Oxide Poly Silicon Ti Tungsten Titania YSZ Zirconia	Ar CHClF₂ CHF₃ O₂ SF₆
Oxford Dielectric Etcher oxford-rie	Flexible	SNF Paul G Allen L107 Cleanroom	Si3N4 SiC SiO₂ PI	C	Ar CF₄ CHF₃ N₂ O₂ SF₆
Plasma Therm Versaline LL ICP Dielectric Etcher PT-Ox	Flexible	SNF Paul G Allen L107 Cleanroom	C Si3N4 SiC SiO₂	Various C-based	Ar C₄F₈ CF₄ CHF₃ H₂ He N₂ O₂
Oxford Plasma Pro ICP-RIE Ox Ox-Ox	Clean	SNF Paul G Allen L107 Cleanroom	Si Si3N4 SiO₂ Poly Silicon		Ar C₄F₈ CF₄ CHF₃ N₂ NF₃ O₂ SF₆

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