Deposition covers a wide variety of methods that are used to add a wide variety of materials. The subcategories here can be useful to help narrow down your search.

  • Atomic Layer Deposition (ALD) is used to deposit less than 50nm of highly conformal films.
  • Chemical Vapor Deposition (CVD) is used to deposit films less than 5μm thick, carbon nanotubes, and graphene.
  • Deposited III-N uses a type of CVD called MOCVD to deposit the nitrides of materials that are found in group III of the periodic table.
  • Deposited III-V uses a type of CVD called MOCVD to deposit combinations of materials from group III and group V of the periodic table.
  • Ink lists the equipment that can be used to print inks that are either commercially available or made by the user.
  • Physical Vapor Deposition (PVD) is used to deposit primarily metal layers as well as some dielectrics.
Processing Techniques Equipment name & NEMO ID Teaser Blurb Cleanliness Location
Carbon Nanotube CVD Growth First Nano carbon nanotube CVD furnace
cvd-nanotube 		Flexible SNF Exfab Paul G Allen L119 Año Nuevo
Evaporation AJA2 Evaporator
aja2-evap

This E-beam evaporator can evaporate a variety of metals (no oxides) onto your substrates. It has an integrated ion mill for substrate precleaning. 

 Flexible SNF Paul G Allen L107 Cleanroom
Evaporation CHA Solutions II Evaporator
cha-evap

cha-evap is a non-load locked e-beam evaporator designed for higher throughput.

Flexible SNF Paul G Allen L107 Cleanroom
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD AMAT Centurion Epitaxial System
epi2

Deposit epitaxial and polycrystalline silicon, germanium and silicon-germanium films.

 Clean SNF Paul G Allen L107 Cleanroom
Metal-Organic (MO) CVD Aixtron MOCVD - III-V system
aix200 		Flexible SNF MOCVD Paul G Allen 213XA
Metal-Organic (MO) CVD Aixtron MOCVD - III-N system
aix-ccs

Aixtron MOCVD for III-N semiconductors: InN, GaN, AlN, InGaN, InAlN, AlGaN, InGaAlN. Aix-ccs is a vertical metal organic chemical vapor deposition (MOCVD) system.

 Clean (MOCVD) SNF MOCVD Paul G Allen 213XA
Sputtering Lesker Sputter
lesker-sputter 		Flexible SNF Exfab Paul G Allen 155A Venice
Sputtering Lesker2 Sputter
lesker2-sputter 		Semiclean SNF Paul G Allen L107 Cleanroom
Thermal ALD MVD
mvd

MVD is a molecular vapor deposition (MVD) system. It is a self assembling monolayers (SAMs)-based configuration of a Savannah S200 from Cambridge Nanotech with 1 SAMs delivery port and 4 standard atomic layer deposition (ALD) lines.  The system can accommodate pieces up to an 8" wafer.

 Flexible SNF Paul G Allen L107 Cleanroom
Plasma Enhanced (PE) ALD Fiji 3 ALD
fiji3

The Fiji3 ALD system from Cambridge Nanotech/Ultratech is a plasma enabled atomic layer deposition system for deposition of restricted oxide films. The system is in the Flexible cleanliness category and allows a limited subset of gold contaminated substrates.

 Flexible SNF Paul G Allen L107 Cleanroom
Plasma Enhanced (PE) CVD PlasmaTherm Versaline HDP CVD System
hdpcvd

High Density Plasma Enhanced Chemical Vapor Deposition (HD PECVD) system is used to deposit silicon dioxide, silicon nitride and amorphous silicon.

 "All" SNF Paul G Allen L107 Cleanroom
Plasma Enhanced (PE) CVD PlasmaTherm Shuttlelock PECVD System
ccp-dep

The Plasma-Therm Shuttlelock PECVD (CCP-Dep) system is used for depositing low-stress silicon nitride, silicon dioxide, amorphous and silicon carbide, and silicon oxynitride layers on 4 inch wafers.

 "All" SNF Paul G Allen L107 Cleanroom

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