ALD Process for Top-Gating 2D Materials | Stanford Nanofabrication Facility

Project Type:

E241

Date:

March 2020 (all day)

Areas of Interest:

2D Material integration, ALD, metal seed layers

Report:

F19- ALD on MoS2 using Seed Layer Deposition & Characterization of Oxidized Seed Layer with ALD Aluminum Oxide Process Runsheet

Processing Technique (former Function and Method):

Atomic Layer Deposition (ALD)

Researchers and (Mentors):

Akash Levy, Jung-Soo Kim, (Michelle Rincon), (J Provine), (Vijay Narasimhan)

List of Important Equipment:

Fiji 2 ALD (fiji2)

Lesker Sputter (lesker-sputter)

Nano Nugget:

SOP for Seeded ALD deposition on MoS2

Standard operating procedures for seed layer aided ALD on 2D materials.

Read more about SOP for Seeded ALD deposition on MoS2

SOP for Seeded ALD depositions on MOSCAPS and MIMS structures on Silicon

Process to create electrical test structures using metal-seeded ALD layers on silicon substrates.

Read more about SOP for Seeded ALD depositions on MOSCAPS and MIMS structures on Silicon

Lesker2 Sputter TiN Initial Development

Our goal was to develop a process for sputtering of NVM-quality TiN using the new Lesker sputtering tool (Lesker-2) that resides inside the cleanroom. This tool can achieve the high-vacuum pressures necessary for TiN films with low levels of oxygen contamination.

Read more about Lesker2 Sputter TiN Initial Development

Presentation:

ALD Process for Top-Gating 2D Materials- Fall 2019 Final Presentation

Materials

2D Materials

Aluminum Oxide

Titanium NItride