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Stanford Nanofabrication Facility

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SNF: Metallization

Equipment Tables

  • Summary
  • Specifications
Equipment name & NEMO ID Technique Cleanliness Material Thickness Range Materials Lab Supplied Substrate Size Substrate Type Maximum Load
CHA Solutions II Evaporator
cha-evap
  • Deposition > Physical Vapor Deposition (PVD) > Evaporation
Flexible
0.00 - 300.00 nm
  • Ag
  • Al
  • Au
  • Cr
  • Cu
  • Ni
  • Pd
  • Pt
  • Ti
  • Pieces
  • 2"
  • 3"
  • 4"
  • 6"
  • Silicon (Si)

  • Silicon Germanium (SiGe)

  • Quartz (SiO2)

  • Sapphire (Al2O3)

  • Germanium (Ge)

  • Other (ProMCom approval required) (Various)

4"x15 or 6"x3 wafers or pieces
Intlvac Evaporator
Intlvac_evap
  • Deposition > Physical Vapor Deposition (PVD) > Evaporation
Clean, Semiclean
0.00 - 0.50 μm
  • Al
  • Co
  • Cr
  • Ge
  • Hf
  • Nb
  • Ni
  • Pd
  • Si
  • Ta
  • Ti
  • V
  • W
  • Zr
  • Moly
  • Pieces
  • 2"
  • 3"
  • 4"
  • 6"
  • Silicon (Si)

  • Silicon Germanium (SiGe)

  • Quartz (SiO2)

12 4 inch wafers, 2 6 inch wafers
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