MOCVD Growth Calibration for GaN LED on Silicon
Project Type:
E241
Date:
June 2015
Areas of Interest:
III-V, MOCVD InGaN, GaN and AlGaN on silicon doping
Processing Technique (former Function and Method):
Researchers and (Mentors):
Yusi Chen, Jieyang Jia, (Xiaoxing Xu)
List of Important Equipment:
Presentation(s):
