Project Type: 
E241
Date: 
December 2014 (all day)
Areas of Interest: 
Heterostructure based device isolation
Report: 
Development of Fluorine Plasma Treatment for AlGaN/GaN Device Isolation- Final Report
Processing Technique (former Function and Method): 
Other
Researchers and (Mentors): 
Caitlin Chapin, Minmin Hou, (Usha Raghuram), (Prof Senesky)
List of Important Equipment: 
Plasma Therm Versaline LL ICP Dielectric Etcher (PT-Ox)
Presentation: 
Development of Fluorine Plasma Treatment for AlGaN/GaN Device Isolation- Final Presentation