Superconducting Parallel Plate Capacitors with High Kinetic Inductance

Project Type:

E241

Date:

March 2020 (all day)

Areas of Interest:

Superconductors, Capacitors

Report:

F19- Superconducting Parallel Plate Capacitors with High Kinetic Inductance Final Report

W20- Superconducting Parallel Plate Capacitors with High Kinetic Inductance Final Report

Processing Technique (former Function and Method):

Sputtering

Inductively Coupled Plasma Etching (ICP)

Researchers and (Mentors):

Kevin Multani, Debadri Das, Hubert Stokowski, (Usha Raghuram), (Swaroop Kommera), (Don Gardner)

List of Important Equipment:

Lesker Sputter (lesker-sputter)

Plasma Therm Versaline LL ICP Dielectric Etcher (PT-Ox)

Plasma Therm Versaline LL ICP Metal Etcher (PT-MTL)

Nano Nugget:

Post-metal etch clean

Procedures for troubleshooting post Nb-etch residues on Sapphire wafers are described.

Read more about Post-metal etch clean

SOP- Niobium structures releasing

We worked out a method for releasing niobium structures with high yield.

Read more about SOP- Niobium structures releasing

Critical Point Drying SOP

The basic version of the Standard Operating Procedures for this tool is already available online but we propose a modified version that ensures higher yield of successful releasing and better overall cleanliness of the process on small chips:

Read more about Critical Point Drying SOP

Presentation:

Superconducting Parallel Plate Capacitors with High Kinetic Inductance- Fall 2019 Final Presentation

Materials

Niobium