High Aspect Ratio Si Etching in STS2

Project Type:

E241

Date:

December 2010 (all day)

Areas of Interest:

HAR Etch for STS2

Report:

High Aspect Ratio Si Etching in STS2- Final Report

Processing Technique (former Function and Method):

Dry Etching

Researchers and (Mentors):

Jae-Woong Jeong, (Jim McVitte)

Presentation:

High Aspect Ratio Si Etching in STS2- Final Presentation