SiNWs Thermoelectric Device Process Development | Stanford Nanofabrication Facility

Project Type:

E241

Date:

March 2020 (all day)

Areas of Interest:

SiNW formation, MACE Etching

Report:

Processing Technique (former Function and Method):

Photolithography

Researchers and (Mentors):

Rui Ning, Yue Jiang, Jihyun Baek, (Usha Raghuram), (Mark Zdeblick), (Don Gardner), (Daihong Huh)

List of Important Equipment:

Nano Nugget:

SOP for patterning Si wafers on heidelberg2

Some processing details for printing patterns for silicon nanowire fabrication.

Procedures for doing NIL in preparation for MACE etching.

Procedures for doing MACE etching to make tall pillars in silicon.

Presentation: