Hydrogen (H2) Annealing is high temperature (600 to 1200c), high flow H2 (5 to 40 liters/minute) ambiant process to clean the oxide from a silicon wafer or to smooth the physical shape of a silicon structure on a wafer.
The temperture, gas flow and reduced pressure that this process requires can be met in an Epitaxial (Epi) reactor.
| Processing Techniques | Equipment name & NEMO ID | Teaser Blurb | Cleanliness | Location |
|---|---|---|---|---|
| EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD |
AMAT Centurion Epitaxial System epi2 |
Deposit epitaxial and polycrystalline silicon, germanium and silicon-germanium films. |
Clean | SNF Paul G Allen L107 Cleanroom |