Gallium Arsenide | Stanford Nanofabrication Facility

Deposition Equipment
Equipment name & NEMO ID	Cleanliness	Location	Material Thickness Range	Approved Materials supplied by Lab
Aixtron MOCVD - III-V system aix200	Flexible	SNF MOCVD Paul G Allen 213XA	0.00 - 5.00 μm	AlAs AlGaAs GaAs GaP GaPN III-V materials InAs InGaAs InGaAsN

Etch Equipment
Equipment name & NEMO ID	Cleanliness	Location	Primary Materials Etched	Other Materials Etched
Oxford III-V etcher Ox-35	Flexible	SNF Paul G Allen L107 Cleanroom	GaAs	AlGaN AlInP GaN InGaP InSb
Wet Bench Flexcorr 1 wbflexcorr-1	Flexible	SNF Paul G Allen L107 Cleanroom	Metals Al Au Cr Si SiO₂ Resist	GaAs Si3N4 Ti W
MRC Reactive Ion Etcher mrc	Flexible	SNF Paul G Allen L107 Cleanroom	Metal oxides Metals Metals or metal compounds with volatile byproducts Metals or metal compounds without volatile byproducts Au Ni poly(p-xylylene) Pt Si Si3N4 SiO₂ Ti Various 2D Materials Various Dielectrics Various polymers PI Resist	Al AlAs AlGaAs AlGaN AlInP AlN AlSi BiFeO₃ C C C Co CoFeB Cr Cu Er Fe Ga₂O₃ GaAs GaN GaP GaPN Ge Hf HfN III-N materials III-V materials In In₂O₃ InAlN InAs InGaAlN InGaAs InGaAsN InGaN InGaP InN InP InPN InSb Ir LaB₆ LiNb Nb Ni_xO_y NiSi Pd Ru Sc SiC SiGe SiO SiON Sn SnO₂ SrO SrRuO Ta Ta₂O₅ TaN TiN V Various C-based Various polymers W WO₃ WSi₂ Y ZnO₃ Zr ZrY Alumina AZO Hafnia ITO LLZO Moly Moly Oxide Poly Silicon Ti Tungsten Titania YSZ Zirconia