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Stanford Nanofabrication Facility

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4 inch

Equipment Tables

  • Summary
  • Specifications
Equipment name & NEMO ID Technique Cleanliness Minimum Resolution Exposure Wavelength Mask Size Max Exposure Area Substrate Size Substrate Type
Karl Suss MA-6 Contact Aligner
karlsuss
  • Photolithography > Exposure > Contact Aligner
"All"
365 nm 4 inch, 5 inch, 7 inch 5 inch mask = 4 inch, 7 inch mask = 6 inch, 4 inch mask = 3 inch
  • Pieces
  • 2"
  • 3"
  • 4"
  • 6"
  • Silicon (Si)

  • Silicon Germanium (SiGe)

  • Quartz (SiO2)

  • Sapphire (Al2O3)

  • Glass (SiO2)

  • Germanium (Ge)

  • Gallium Nitride (GaN)

  • III-V (III-V)

  • Gallium Arsenide (GaAs)

  • Polymer (Various)

Karl Suss MA-6 Contact Aligner
karlsuss2
  • Photolithography > Exposure > Contact Aligner
"All"
365 nm or 405 nm 4 inch, 5 inch, 7 inch 5 inch mask = 4 inch, 7 inch mask = 6 inch, 4 inch mask = 3 inch
  • Pieces
  • 2"
  • 3"
  • 4"
  • 6"
  • Silicon (Si)

  • Silicon Germanium (SiGe)

  • Quartz (SiO2)

  • Sapphire (Al2O3)

  • Glass (SiO2)

  • Germanium (Ge)

  • Gallium Nitride (GaN)

  • III-V (III-V)

  • Gallium Arsenide (GaAs)

  • Polymer (Various)

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