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Stanford Nanofabrication Facility

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SNF: Furnaces

Equipment Tables

  • Summary
  • Specifications
Equipment name & NEMO ID Technique Cleaning Required Cleanliness Material Thickness Range Materials Lab Supplied Process Temperature Range Gases Substrate Size Substrate Type Maximum Load
Tystar Bank 1 Tube 1 Anneal
B1T1 Flexible Oxide
  • Annealing & Oxidation > Oxide Growth (furnace)
Flexible
25.00 Å - 2.00 μm
400 °C - 1100 °C
  • 4% H2 in N2
  • N2
  • O2
  • 4"
  • 6"
  • Silicon (Si)

  • Silicon Germanium (SiGe)

  • Quartz (SiO2)

100
Tystar Bank 1 Tube 2
B1T2 Flexible Oxide
  • Annealing & Oxidation > Oxide Growth (furnace)
  • Annealing & Oxidation > Annealing (furnace)
Flexible
25.00 Å - 2.00 μm
  • SiO2
400 °C - 1100 °C
  • 4% H2 in N2
  • N2
  • O2
  • 4"
  • 6"
  • Silicon (Si)

  • Silicon Germanium (SiGe)

  • Quartz (SiO2)

100
Tystar Bank 2 Tube 5
B2T5 Clean Anneal
  • Annealing & Oxidation > Oxide Growth (furnace)
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
400 °C - 1100 °C
  • 4% H2 in N2
  • N2
  • O2
  • 4"
  • 6"
  • Silicon (Si)

  • Silicon Germanium (SiGe)

  • Quartz (SiO2)

100
Tystar Bank 2 Tube 6
B2T6 Clean Oxide
  • Annealing & Oxidation > Oxide Growth (furnace)
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
  • SiO2
400 °C - 1100 °C
  • 4% H2 in N2
  • N2
  • O2
  • 4"
  • 6"
  • Silicon (Si)

  • Silicon Germanium (SiGe)

  • Quartz (SiO2)

100
Tystar Bank 3 Tube 9
B3T9 Clean Oxide
  • Annealing & Oxidation > Oxide Growth (furnace)
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
  • SiO2
400 °C - 1100 °C
  • 4% H2 in N2
  • N2
  • O2
  • 4"
  • 6"
  • Silicon (Si)

  • Silicon Germanium (SiGe)

  • Quartz (SiO2)

100
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