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Aluminum Nitride
Chemical Formula:
AlN
Equipment Tabs
Deposition Equipment
Equipment name or Badger ID
Partial words okay.
Deposition Equipment
Equipment name & Badger ID
Cleanliness
Location
Material Thickness Range
Approved Materials supplied by Lab
Aixtron MOCVD - III-N system
aix-ccs
Clean (MOCVD)
SNF MOCVD Paul G Allen 213XA
0.00
-
5.00 μm
AlGaN
AlN
GaN
III-N materials
InAlN
InGaAlN
InGaN
InN
Etching Equipment
Equipment name or Badger ID
Partial words okay.
Etch Equipment
Equipment name & Badger ID
Cleanliness
Location
Primary Materials Etched
Other Materials Etched
MRC Reactive Ion Etcher
mrc
Flexible
SNF Paul G Allen L107 Cleanroom
Metal oxides
Metals
Metals or metal compounds with volatile byproducts
Metals or metal compounds without volatile byproducts
Au
Ni
poly(p-xylylene)
Pt
Si
Si3N4
SiO
2
Ti
Various 2D Materials
Various Dielectrics
Various polymers
PI
Resist
Al
AlAs
AlGaAs
AlGaN
AlInP
AlN
AlSi
BiFeO
3
C
C
C
Co
CoFeB
Cr
Cu
Er
Fe
Ga
2
O
3
GaAs
GaN
GaP
GaPN
Ge
Hf
HfN
III-N materials
III-V materials
In
In
2
O
3
InAlN
InAs
InGaAlN
InGaAs
InGaAsN
InGaN
InGaP
InN
InP
InPN
InSb
Ir
LaB
6
LiNb
Nb
Ni
x
O
y
NiSi
Pd
Ru
Sc
SiC
SiGe
SiO
SiON
Sn
SnO
2
SrO
SrRuO
Ta
Ta
2
O
5
TaN
TiN
V
Various C-based
Various polymers
W
WO
3
WSi
2
Y
ZnO
3
Zr
ZrY
Alumina
AZO
Hafnia
ITO
LLZO
Moly
Moly Oxide
Poly Silicon
Ti Tungsten
Titania
YSZ
Zirconia
Projects
Development of Thin Film Release of GaN using AlN and AlGaN Buffer Layers for MEMS Applications- Final Report
-- (Report)
Development of Thin Film Release of GaN using AlN and AlGaN Buffer layers for MEMs Applications- Final Presentation
-- (Presentation)
Improve the performance of MOCVD grown GaN-on-Si HEMT structure