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SNF: Annealing, Oxidation and Doping

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Equipment name & NEMO ID Technique Cleaning Required Cleanliness Material Thickness Range Materials Lab Supplied Process Temperature Range Gases Substrate Size Substrate Type Maximum Load
RTA AllWin 610
aw610_l
Pre-Diffusion Clean Clean
21 °C - 1150 °C
(Si)
,
(SiGe)
,
(SiO2)
 1 wafer
RTA AllWin 610
aw610_r
Flexible
21 °C - 1150 °C
(Si)
,
(SiGe)
,
(SiO2)
Thermco3 Oxidation Furnace
thermco 3
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
700 °C - 1100 °C
50
Tylan9 Forming Gas Anneal Furnace
tylan9
Flexible
250 °C - 1100 °C
(Si)
,
(SiGe)
,
(SiO2)
 50
Tystar Bank 1 Tube 1
B1T1 Flexible Oxide
Flexible
25.00 Å - 2.00 μm
400 °C - 1100 °C
(Si)
,
(SiGe)
,
(SiO2)
 100
Tystar Bank 1 Tube 2
B1T2 Flexible Oxide Anneal
Flexible
25.00 Å - 2.00 μm
400 °C - 1100 °C
(Si)
,
(SiGe)
,
(SiO2)
 100
Tystar Bank 2 Tube 5
B2T5 Clean Oxide Anneal
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
400 °C - 1100 °C
(Si)
,
(SiGe)
,
(SiO2)
 100
Tystar Bank 2 Tube 6
B2T6 Clean Oxide
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
400 °C - 1100 °C
(Si)
,
(SiGe)
,
(SiO2)
 100
Tystar Bank 3 Tube 9
B3T9 Clean Oxide
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
400 °C - 1100 °C
(Si)
,
(SiGe)
,
(SiO2)
 100