Etching is a broad term that is used to describe the removal of material from your sample. The sub categories may be helpful for narrowing down your search, and be aware that there may be more than one technique and/or tool that could be used for your process. 

  • Dry etching uses gaseous chemistries and plasma energy to etch materials from the sample. 
  • Wet etching uses liquid chemistries to etch materials from samples. 
  • Vapor etching uses HF Vapor to etch materials. It is primarily used to etch structures that would be damaged during the rinse and dry process in a standard wet etch.
Processing Techniques Equipment name & NEMO ID Teaser Blurb Cleanliness Locationsort ascending
Silicon Oxide Wet Etching, Wet Chemical Processing Wet Bench Clean_res-hf
wbclean_res-hf

Semi-automated wet bench for etching oxide from 3", 4", and 6" Si, SiGe, and quartz substrates using 50:1 HF, 6:1BOE, or 20:1BOE. 2 baths can hold up to 25 wafers. Part of the Clean Cleanliness Group.

 Clean SNF Paul G Allen L107 Cleanroom
Inductively Coupled Plasma Etching (ICP) Oxford Plasma Pro ICP-RIE ALE
Ox-ALE

Oxford ICP-RIE Atomic Layer Etching (OX-ALE) is an Inductively Coupled Plasma (ICP) etch system designed for high-precision etching of silicon-based materials, III-V semiconductors, and 2D materials.

 Flexible SNF Paul G Allen L107 Cleanroom
Acid or Base Wet Etching, Piranha Cleaning, Wet Chemical Processing Wet Bench Flexcorr 4
wbflexcorr-4

Manual wet etching of non-standard materials using acids or bases. Hot plate, HF bath, and controlled temperature bath available. GaAs not allowed.

 Flexible SNF Paul G Allen L107 Cleanroom
Inductively Coupled Plasma Etching (ICP) Oxford Plasma Pro ICP-RIE Ox
Ox-Ox

Oxford ICP-RIE Oxide Etcher (Ox-Ox) is an Inductively Coupled Plasma (ICP) etch system optimized for high-precision etching of silicon-based materials

 Clean SNF Paul G Allen L107 Cleanroom

Pages