Deposition covers a wide variety of methods that are used to add a wide variety of materials. The subcategories here can be useful to help narrow down your search.

  • Atomic Layer Deposition (ALD) is used to deposit less than 50nm of highly conformal films.
  • Chemical Vapor Deposition (CVD) is used to deposit films less than 5μm thick, carbon nanotubes, and graphene.
  • Deposited III-N uses a type of CVD called MOCVD to deposit the nitrides of materials that are found in group III of the periodic table.
  • Deposited III-V uses a type of CVD called MOCVD to deposit combinations of materials from group III and group V of the periodic table.
  • Ink lists the equipment that can be used to print inks that are either commercially available or made by the user.
  • Physical Vapor Deposition (PVD) is used to deposit primarily metal layers as well as some dielectrics.
Processing Technique Equipment name & NEMO ID Cleanliness Materials Lab Supplied Material Thickness Range Substrate Size Maximum Load (number of wafers) Process Temperature Range Gases Cleaning Required Notes Stylus Tip Radius
Deposition PDS 2010 LABCOTER™ 2 Parylene Deposition System
parcoater 		Flexible
Plasma Enhanced (PE) CVD PlasmaTherm Shuttlelock PECVD System
ccp-dep 		"All"
100.00 Å - 4.00 μm
4
100 °C - 350 °C

To maintain cleanliness level, cleans of both the chamber and wafers are required prior to processing -

Substrates in clean category: Pre-Diffusion Clean

For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) . Run Chamber clean (no dummies) and conditioning with clean dummies prior to run
Plasma Enhanced (PE) CVD PlasmaTherm Versaline HDP CVD System
hdpcvd 		"All"
500.00 Å - 4.00 μm
1
50 °C - 150 °C

To maintain cleanliness level there are cleans required for both the chamber and wafers prior to processing -

Substrates in clean category: Pre-Diffusion Clean

For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) .  Run Chamber clean (no dummies) and conditioning with clean dummies prior to run
Thermal ALD Savannah ALD
savannah 		Flexible
1.00 Å - 50.00 nm
24 °C - 250 °C
Low Pressure (LP) CVD Tystar Bank 1 Tube 3 Poly
B1T3 Flexible Poly 		Flexible
25.00 Å - 2.00 μm
100
420 °C - 630 °C
Low Pressure (LP) CVD Tystar Bank 1 Tube 4 LTO
B1T4 Flexible LTO 		Flexible
25.00 Å - 2.00 μm
100
300 °C - 500 °C
Low Pressure (LP) CVD Tystar Bank 2 Tube 7 Nitride
B2T7 Flexible Nitride 		Flexible
25.00 Å - 2.00 μm
50
420 °C - 800 °C
Low Pressure (LP) CVD Tystar Bank 2 Tube 8 LTO
B2T8 Clean LTO 		Clean
25.00 Å - 2.00 μm
100
300 °C - 500 °C
Low Pressure (LP) CVD Tystar Bank 3 Tube 10 Nitride
B3T10 Clean Nitride 		Clean
25.00 Å - 2.00 μm
50
420 °C - 800 °C
Pre-Diffusion Clean
Low Pressure (LP) CVD Tystar Bank 3 Tube 11 TEOS
B3T11 Clean TEOS 		Clean
25.00 Å - 2.00 μm
50
420 °C - 630 °C
Pre-Diffusion Clean
Low Pressure (LP) CVD Tystar Bank 3 Tube 12 Poly
B3T12 Clean Poly 		Clean
25.00 Å - 2.00 μm
50
420 °C - 630 °C
Pre-Diffusion Clean
Patterning, Ink Voltera
voltera 		Flexible

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