Deposition covers a wide variety of methods that are used to add a wide variety of materials. The subcategories here can be useful to help narrow down your search.

  • Atomic Layer Deposition (ALD) is used to deposit less than 50nm of highly conformal films.
  • Chemical Vapor Deposition (CVD) is used to deposit films less than 5μm thick, carbon nanotubes, and graphene.
  • Deposited III-N uses a type of CVD called MOCVD to deposit the nitrides of materials that are found in group III of the periodic table.
  • Deposited III-V uses a type of CVD called MOCVD to deposit combinations of materials from group III and group V of the periodic table.
  • Ink lists the equipment that can be used to print inks that are either commercially available or made by the user.
  • Physical Vapor Deposition (PVD) is used to deposit primarily metal layers as well as some dielectrics.
Processing Technique Equipment name & NEMO ID Cleanliness Materials Lab Supplied Material Thickness Range Substrate Size Maximum Load (number of wafers) Process Temperature Range Gases Cleaning Required Notessort descending Stylus Tip Radius
Carbon Nanotube CVD Growth First Nano carbon nanotube CVD furnace
cvd-nanotube 		Flexible
1x4" wafer or multiple pieces
800 °C - 1100 °C

Aligned single-walled carbon nanotube growth with ST-cut quartz substrates (available from SNF stockroom);1-15 single-walled carbon nanotubes per micron density
Evaporation AJA2 Evaporator
aja2-evap 		Flexible
0.00 - 300.00 nm
4"x3 or 6"x1 wafers or pieces

For more than 300nm deposition, please contact Gabe Catalano <gcatalano@stanford.edu> in advance
Evaporation CHA Solutions II Evaporator
cha-evap 		Flexible
0.00 - 300.00 nm
4"x15 or 6"x3 wafers or pieces

For more than 300nm deposition, please contact Neel Mehta <nmehta26@stanford.edu> in advance
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD AMAT Centurion Epitaxial System
epi2 		Clean
50.00 Å - 3.00 μm
1
600 °C - 1200 °C
Pre-Diffusion Clean

N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr
Metal-Organic (MO) CVD Aixtron MOCVD - III-V system
aix200 		Flexible
0.00 - 5.00 μm
4"x1 wafer or 2"x1 wafer or 4 pieces
300 °C - 800 °C
Pre-Diffusion Clean

N and P doping available. For Si clean: SC1, SC2, HF dip. For III-V clean: HCl or HF dip.
Metal-Organic (MO) CVD Aixtron MOCVD - III-N system
aix-ccs 		Clean (MOCVD)
0.00 - 5.00 μm
4"x1, 2"X3, pieces
400 °C - 1300 °C

N and P doping available. For Si clean: SC1, SC2, HF dip. For Sapphire clean: SC1, SC2. For GaN template on Si or Sapphire: Piranha, SC1, SC2.
Sputtering Lesker Sputter
lesker-sputter 		Flexible
1 4 inch wafer, 1 6 inch wafer

reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter
Sputtering Lesker2 Sputter
lesker2-sputter 		Semiclean
1.00 μm
one 4 inch wafer, one 6 inch wafer
°C - 800 °C

reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter
Thermal ALD MVD
mvd 		Flexible
1.00 Å - 50.00 nm
24 °C - 150 °C

Reactor located inside glovebox
Plasma Enhanced (PE) ALD Fiji 3 ALD
fiji3 		Flexible
1.00 Å - 50.00 nm
24 °C - 350 °C

Restricted to non-conductive films only
Plasma Enhanced (PE) CVD PlasmaTherm Versaline HDP CVD System
hdpcvd 		"All"
500.00 Å - 4.00 μm
1
50 °C - 150 °C

To maintain cleanliness level there are cleans required for both the chamber and wafers prior to processing -

Substrates in clean category: Pre-Diffusion Clean

For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) .  Run Chamber clean (no dummies) and conditioning with clean dummies prior to run
Plasma Enhanced (PE) CVD PlasmaTherm Shuttlelock PECVD System
ccp-dep 		"All"
100.00 Å - 4.00 μm
4
100 °C - 350 °C

To maintain cleanliness level, cleans of both the chamber and wafers are required prior to processing -

Substrates in clean category: Pre-Diffusion Clean

For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) . Run Chamber clean (no dummies) and conditioning with clean dummies prior to run

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