Deposition covers a wide variety of methods that are used to add a wide variety of materials. The subcategories here can be useful to help narrow down your search.

  • Atomic Layer Deposition (ALD) is used to deposit less than 50nm of highly conformal films.
  • Chemical Vapor Deposition (CVD) is used to deposit films less than 5μm thick, carbon nanotubes, and graphene.
  • Deposited III-N uses a type of CVD called MOCVD to deposit the nitrides of materials that are found in group III of the periodic table.
  • Deposited III-V uses a type of CVD called MOCVD to deposit combinations of materials from group III and group V of the periodic table.
  • Ink lists the equipment that can be used to print inks that are either commercially available or made by the user.
  • Physical Vapor Deposition (PVD) is used to deposit primarily metal layers as well as some dielectrics.
Processing Technique Equipment name & NEMO IDsort ascending Cleanliness Materials Lab Supplied Material Thickness Range Substrate Size Maximum Load (number of wafers) Process Temperature Range Gases Cleaning Required Notes Stylus Tip Radius
Patterning, Ink Voltera
voltera 		Flexible
Low Pressure (LP) CVD Tystar Bank 3 Tube 12 Poly
B3T12 Clean Poly 		Clean
25.00 Å - 2.00 μm
50
420 °C - 630 °C
Pre-Diffusion Clean
Low Pressure (LP) CVD Tystar Bank 3 Tube 11 TEOS
B3T11 Clean TEOS 		Clean
25.00 Å - 2.00 μm
50
420 °C - 630 °C
Pre-Diffusion Clean
Low Pressure (LP) CVD Tystar Bank 3 Tube 10 Nitride
B3T10 Clean Nitride 		Clean
25.00 Å - 2.00 μm
50
420 °C - 800 °C
Pre-Diffusion Clean
Low Pressure (LP) CVD Tystar Bank 2 Tube 8 LTO
B2T8 Clean LTO 		Clean
25.00 Å - 2.00 μm
100
300 °C - 500 °C
Low Pressure (LP) CVD Tystar Bank 2 Tube 7 Nitride
B2T7 Flexible Nitride 		Flexible
25.00 Å - 2.00 μm
50
420 °C - 800 °C
Low Pressure (LP) CVD Tystar Bank 1 Tube 4 LTO
B1T4 Flexible LTO 		Flexible
25.00 Å - 2.00 μm
100
300 °C - 500 °C
Low Pressure (LP) CVD Tystar Bank 1 Tube 3 Poly
B1T3 Flexible Poly 		Flexible
25.00 Å - 2.00 μm
100
420 °C - 630 °C
Thermal ALD Savannah ALD
savannah 		Flexible
1.00 Å - 50.00 nm
24 °C - 250 °C
Plasma Enhanced (PE) CVD PlasmaTherm Versaline HDP CVD System
hdpcvd 		"All"
500.00 Å - 4.00 μm
1
50 °C - 150 °C

To maintain cleanliness level there are cleans required for both the chamber and wafers prior to processing -

Substrates in clean category: Pre-Diffusion Clean

For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) .  Run Chamber clean (no dummies) and conditioning with clean dummies prior to run
Plasma Enhanced (PE) CVD PlasmaTherm Shuttlelock PECVD System
ccp-dep 		"All"
100.00 Å - 4.00 μm
4
100 °C - 350 °C

To maintain cleanliness level, cleans of both the chamber and wafers are required prior to processing -

Substrates in clean category: Pre-Diffusion Clean

For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) . Run Chamber clean (no dummies) and conditioning with clean dummies prior to run
Deposition PDS 2010 LABCOTER™ 2 Parylene Deposition System
parcoater 		Flexible
Deposition PDMS Workbench Flexible
Plasma Enhanced (PE) CVD Oxford Plasma Pro PECVD
Ox-PECVD 		Semiclean, Flexible
100.00 Å - 4.00 μm
1
200 °C - 350 °C
Ink Optomec Printer
optomec-printer 		Flexible
Thermal ALD MVD
mvd 		Flexible
1.00 Å - 50.00 nm
24 °C - 150 °C

Reactor located inside glovebox
Sputtering Lesker2 Sputter
lesker2-sputter 		Semiclean
1.00 μm
one 4 inch wafer, one 6 inch wafer
°C - 800 °C

reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter
Sputtering Lesker Sputter
lesker-sputter 		Flexible
1 4 inch wafer, 1 6 inch wafer

reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter
Evaporation Intlvac Evaporator
Intlvac_evap 		Clean, Semiclean
0.00 - 0.50 μm
12 4 inch wafers, 2 6 inch wafers
Sputtering Hummer V Sputter Coater
hummer 		Flexible

Pages