Deposition covers a wide variety of methods that are used to add a wide variety of materials. The subcategories here can be useful to help narrow down your search.

  • Atomic Layer Deposition (ALD) is used to deposit less than 50nm of highly conformal films.
  • Chemical Vapor Deposition (CVD) is used to deposit films less than 5μm thick, carbon nanotubes, and graphene.
  • Deposited III-N uses a type of CVD called MOCVD to deposit the nitrides of materials that are found in group III of the periodic table.
  • Deposited III-V uses a type of CVD called MOCVD to deposit combinations of materials from group III and group V of the periodic table.
  • Ink lists the equipment that can be used to print inks that are either commercially available or made by the user.
  • Physical Vapor Deposition (PVD) is used to deposit primarily metal layers as well as some dielectrics.
Processing Technique Equipment name & NEMO IDsort descending Cleanliness Materials Lab Supplied Material Thickness Range Substrate Size Maximum Load (number of wafers) Process Temperature Range Gases Cleaning Required Notes Stylus Tip Radius
Graphene CVD Growth Aixtron Black Magic graphene CVD furnace
aixtron-graphene 		Flexible
1x4" wafer or Copper/Nickel foil
800 °C - 1100 °C
Metal-Organic (MO) CVD Aixtron MOCVD - III-N system
aix-ccs 		Clean (MOCVD)
0.00 - 5.00 μm
4"x1, 2"X3, pieces
400 °C - 1300 °C

N and P doping available. For Si clean: SC1, SC2, HF dip. For Sapphire clean: SC1, SC2. For GaN template on Si or Sapphire: Piranha, SC1, SC2.
Metal-Organic (MO) CVD Aixtron MOCVD - III-V system
aix200 		Flexible
0.00 - 5.00 μm
4"x1 wafer or 2"x1 wafer or 4 pieces
300 °C - 800 °C
Pre-Diffusion Clean

N and P doping available. For Si clean: SC1, SC2, HF dip. For III-V clean: HCl or HF dip.
Evaporation AJA Evaporator
aja-evap 		Flexible
0.00 - 300.00 nm
4"x3 or 6"x1 wafers or pieces

For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance
Evaporation AJA2 Evaporator
aja2-evap 		Flexible
0.00 - 300.00 nm
4"x3 or 6"x1 wafers or pieces

For more than 300nm deposition, please contact Gabe Catalano <gcatalano@stanford.edu> in advance
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD AMAT Centurion Epitaxial System
epi2 		Clean
50.00 Å - 3.00 μm
1
600 °C - 1200 °C
Pre-Diffusion Clean

N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr
Evaporation CHA Solutions II Evaporator
cha-evap 		Flexible
0.00 - 300.00 nm
4"x15 or 6"x3 wafers or pieces

For more than 300nm deposition, please contact Neel Mehta <nmehta26@stanford.edu> in advance
Plasma Enhanced (PE) ALD Fiji 1 ALD
fiji1 		Semiclean
1.00 Å - 50.00 nm
24 °C - 350 °C
Plasma Enhanced (PE) ALD Fiji 2 ALD
fiji2 		Flexible
1.00 Å - 50.00 nm
24 °C - 350 °C
Plasma Enhanced (PE) ALD Fiji 3 ALD
fiji3 		Flexible
1.00 Å - 50.00 nm
24 °C - 350 °C

Restricted to non-conductive films only
Carbon Nanotube CVD Growth First Nano carbon nanotube CVD furnace
cvd-nanotube 		Flexible
1x4" wafer or multiple pieces
800 °C - 1100 °C

Aligned single-walled carbon nanotube growth with ST-cut quartz substrates (available from SNF stockroom);1-15 single-walled carbon nanotubes per micron density
Ink Fujifilm Dimatix Ink Jet Printer
nanoinkjet 		Flexible
Sputtering Hummer V Sputter Coater
hummer 		Flexible
Evaporation Intlvac Evaporator
Intlvac_evap 		Clean, Semiclean
0.00 - 0.50 μm
12 4 inch wafers, 2 6 inch wafers
Sputtering Lesker Sputter
lesker-sputter 		Flexible
1 4 inch wafer, 1 6 inch wafer

reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter
Sputtering Lesker2 Sputter
lesker2-sputter 		Semiclean
1.00 μm
one 4 inch wafer, one 6 inch wafer
°C - 800 °C

reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter
Thermal ALD MVD
mvd 		Flexible
1.00 Å - 50.00 nm
24 °C - 150 °C

Reactor located inside glovebox
Ink Optomec Printer
optomec-printer 		Flexible
Plasma Enhanced (PE) CVD Oxford Plasma Pro PECVD
Ox-PECVD 		Semiclean, Flexible
100.00 Å - 4.00 μm
1
200 °C - 350 °C
Deposition PDMS Workbench Flexible

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