Deposition covers a wide variety of methods that are used to add a wide variety of materials. The subcategories here can be useful to help narrow down your search.

  • Atomic Layer Deposition (ALD) is used to deposit less than 50nm of highly conformal films.
  • Chemical Vapor Deposition (CVD) is used to deposit films less than 5μm thick, carbon nanotubes, and graphene.
  • Deposited III-N uses a type of CVD called MOCVD to deposit the nitrides of materials that are found in group III of the periodic table.
  • Deposited III-V uses a type of CVD called MOCVD to deposit combinations of materials from group III and group V of the periodic table.
  • Ink lists the equipment that can be used to print inks that are either commercially available or made by the user.
  • Physical Vapor Deposition (PVD) is used to deposit primarily metal layers as well as some dielectrics.
Processing Technique Equipment name & NEMO ID Cleanliness Materials Lab Supplied Material Thickness Range Substrate Size Maximum Load (number of wafers)sort ascending Process Temperature Range Gases Cleaning Required Notes Stylus Tip Radius
Sputtering Lesker2 Sputter
lesker2-sputter 		Semiclean
1.00 μm
one 4 inch wafer, one 6 inch wafer
°C - 800 °C

reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter
Low Pressure (LP) CVD Tystar Bank 3 Tube 12 Poly
B3T12 Clean Poly 		Clean
25.00 Å - 2.00 μm
50
420 °C - 630 °C
Pre-Diffusion Clean
Low Pressure (LP) CVD Tystar Bank 3 Tube 10 Nitride
B3T10 Clean Nitride 		Clean
25.00 Å - 2.00 μm
50
420 °C - 800 °C
Pre-Diffusion Clean
Low Pressure (LP) CVD Tystar Bank 2 Tube 7 Nitride
B2T7 Flexible Nitride 		Flexible
25.00 Å - 2.00 μm
50
420 °C - 800 °C
Low Pressure (LP) CVD Tystar Bank 3 Tube 11 TEOS
B3T11 Clean TEOS 		Clean
25.00 Å - 2.00 μm
50
420 °C - 630 °C
Pre-Diffusion Clean
Evaporation AJA2 Evaporator
aja2-evap 		Flexible
0.00 - 300.00 nm
4"x3 or 6"x1 wafers or pieces

For more than 300nm deposition, please contact Gabe Catalano <gcatalano@stanford.edu> in advance
Evaporation AJA Evaporator
aja-evap 		Flexible
0.00 - 300.00 nm
4"x3 or 6"x1 wafers or pieces

For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance

Evaporation CHA Solutions II Evaporator
cha-evap 		Flexible
0.00 - 300.00 nm
4"x15 or 6"x3 wafers or pieces

For more than 300nm deposition, please contact Neel Mehta <nmehta26@stanford.edu> in advance
Metal-Organic (MO) CVD Aixtron MOCVD - III-N system
aix-ccs 		Clean (MOCVD)
0.00 - 5.00 μm
4"x1, 2"X3, pieces
400 °C - 1300 °C

N and P doping available. For Si clean: SC1, SC2, HF dip. For Sapphire clean: SC1, SC2. For GaN template on Si or Sapphire: Piranha, SC1, SC2.
Metal-Organic (MO) CVD Aixtron MOCVD - III-V system
aix200 		Flexible
0.00 - 5.00 μm
4"x1 wafer or 2"x1 wafer or 4 pieces
300 °C - 800 °C
Pre-Diffusion Clean

N and P doping available. For Si clean: SC1, SC2, HF dip. For III-V clean: HCl or HF dip.
Plasma Enhanced (PE) CVD PlasmaTherm Shuttlelock PECVD System
ccp-dep 		"All"
100.00 Å - 4.00 μm
4
100 °C - 350 °C

To maintain cleanliness level, cleans of both the chamber and wafers are required prior to processing -

Substrates in clean category: Pre-Diffusion Clean

For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) . Run Chamber clean (no dummies) and conditioning with clean dummies prior to run
Carbon Nanotube CVD Growth First Nano carbon nanotube CVD furnace
cvd-nanotube 		Flexible
1x4" wafer or multiple pieces
800 °C - 1100 °C

Aligned single-walled carbon nanotube growth with ST-cut quartz substrates (available from SNF stockroom);1-15 single-walled carbon nanotubes per micron density
Graphene CVD Growth Aixtron Black Magic graphene CVD furnace
aixtron-graphene 		Flexible
1x4" wafer or Copper/Nickel foil
800 °C - 1100 °C
Evaporation Intlvac Evaporator
Intlvac_evap 		Clean, Semiclean
0.00 - 0.50 μm
12 4 inch wafers, 2 6 inch wafers
Low Pressure (LP) CVD Tystar Bank 1 Tube 3 Poly
B1T3 Flexible Poly 		Flexible
25.00 Å - 2.00 μm
100
420 °C - 630 °C
Low Pressure (LP) CVD Tystar Bank 1 Tube 4 LTO
B1T4 Flexible LTO 		Flexible
25.00 Å - 2.00 μm
100
300 °C - 500 °C
Low Pressure (LP) CVD Tystar Bank 2 Tube 8 LTO
B2T8 Clean LTO 		Clean
25.00 Å - 2.00 μm
100
300 °C - 500 °C
Sputtering Lesker Sputter
lesker-sputter 		Flexible
1 4 inch wafer, 1 6 inch wafer

reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter
Plasma Enhanced (PE) CVD Oxford Plasma Pro PECVD
Ox-PECVD 		Semiclean, Flexible
100.00 Å - 4.00 μm
1
200 °C - 350 °C
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD AMAT Centurion Epitaxial System
epi2 		Clean
50.00 Å - 3.00 μm
1
600 °C - 1200 °C
Pre-Diffusion Clean

N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr

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