Deposition covers a wide variety of methods that are used to add a wide variety of materials. The subcategories here can be useful to help narrow down your search.

  • Atomic Layer Deposition (ALD) is used to deposit less than 50nm of highly conformal films.
  • Chemical Vapor Deposition (CVD) is used to deposit films less than 5μm thick, carbon nanotubes, and graphene.
  • Deposited III-N uses a type of CVD called MOCVD to deposit the nitrides of materials that are found in group III of the periodic table.
  • Deposited III-V uses a type of CVD called MOCVD to deposit combinations of materials from group III and group V of the periodic table.
  • Ink lists the equipment that can be used to print inks that are either commercially available or made by the user.
  • Physical Vapor Deposition (PVD) is used to deposit primarily metal layers as well as some dielectrics.
Processing Technique Equipment name & NEMO ID Cleanliness Materials Lab Supplied Material Thickness Range Substrate Size Maximum Load (number of wafers)sort descending Process Temperature Range Gases Cleaning Required Notes Stylus Tip Radius
Ink Fujifilm Dimatix Ink Jet Printer
nanoinkjet 		Flexible
Sputtering Hummer V Sputter Coater
hummer 		Flexible
Ink Optomec Printer
optomec-printer 		Flexible
Deposition PDMS Workbench Flexible
Plasma Enhanced (PE) ALD Fiji 1 ALD
fiji1 		Semiclean
1.00 Å - 50.00 nm
24 °C - 350 °C
Plasma Enhanced (PE) ALD Fiji 2 ALD
fiji2 		Flexible
1.00 Å - 50.00 nm
24 °C - 350 °C
Plasma Enhanced (PE) ALD Fiji 3 ALD
fiji3 		Flexible
1.00 Å - 50.00 nm
24 °C - 350 °C

Restricted to non-conductive films only
Thermal ALD MVD
mvd 		Flexible
1.00 Å - 50.00 nm
24 °C - 150 °C

Reactor located inside glovebox
Thermal ALD Savannah ALD
savannah 		Flexible
1.00 Å - 50.00 nm
24 °C - 250 °C
Deposition PDS 2010 LABCOTER™ 2 Parylene Deposition System
parcoater 		Flexible
Patterning, Ink Voltera
voltera 		Flexible
Plasma Enhanced (PE) CVD Oxford Plasma Pro PECVD
Ox-PECVD 		Semiclean, Flexible
100.00 Å - 4.00 μm
1
200 °C - 350 °C
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD AMAT Centurion Epitaxial System
epi2 		Clean
50.00 Å - 3.00 μm
1
600 °C - 1200 °C
Pre-Diffusion Clean

N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr
Plasma Enhanced (PE) CVD PlasmaTherm Versaline HDP CVD System
hdpcvd 		"All"
500.00 Å - 4.00 μm
1
50 °C - 150 °C

To maintain cleanliness level there are cleans required for both the chamber and wafers prior to processing -

Substrates in clean category: Pre-Diffusion Clean

For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) .  Run Chamber clean (no dummies) and conditioning with clean dummies prior to run
Sputtering Lesker Sputter
lesker-sputter 		Flexible
1 4 inch wafer, 1 6 inch wafer

reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter
Low Pressure (LP) CVD Tystar Bank 1 Tube 3 Poly
B1T3 Flexible Poly 		Flexible
25.00 Å - 2.00 μm
100
420 °C - 630 °C
Low Pressure (LP) CVD Tystar Bank 1 Tube 4 LTO
B1T4 Flexible LTO 		Flexible
25.00 Å - 2.00 μm
100
300 °C - 500 °C
Low Pressure (LP) CVD Tystar Bank 2 Tube 8 LTO
B2T8 Clean LTO 		Clean
25.00 Å - 2.00 μm
100
300 °C - 500 °C
Evaporation Intlvac Evaporator
Intlvac_evap 		Clean, Semiclean
0.00 - 0.50 μm
12 4 inch wafers, 2 6 inch wafers
Graphene CVD Growth Aixtron Black Magic graphene CVD furnace
aixtron-graphene 		Flexible
1x4" wafer or Copper/Nickel foil
800 °C - 1100 °C

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