PVD is characterized by a process in which the material goes from a condensed phase to a vapor phase and then back to a thin film condensed phase. The most common PVD processes are sputtering and evaporation.

Processing Technique Equipment name & NEMO ID Cleanliness Materials Lab Supplied Material Thickness Range Substrate Size Maximum Load (number of wafers) Process Temperature Range Gases Notes Stylus Tip Radius
Evaporation AJA Evaporator
aja-evap 		Flexible
0.00 - 300.00 nm
4"x3 or 6"x1 wafers or pieces

For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance
Evaporation AJA2 Evaporator
aja2-evap 		Flexible
0.00 - 300.00 nm
4"x3 or 6"x1 wafers or pieces

For more than 300nm deposition, please contact Gabe Catalano <gcatalano@stanford.edu> in advance
Evaporation CHA Solutions II Evaporator
cha-evap 		Flexible
0.00 - 300.00 nm
4"x15 or 6"x3 wafers or pieces

For more than 300nm deposition, please contact Neel Mehta <nmehta26@stanford.edu> in advance
Sputtering Hummer V Sputter Coater
hummer 		Flexible
Evaporation Intlvac Evaporator
Intlvac_evap 		Clean, Semiclean
0.00 - 0.50 μm
12 4 inch wafers, 2 6 inch wafers
Sputtering Lesker Sputter
lesker-sputter 		Flexible
1 4 inch wafer, 1 6 inch wafer

reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter
Sputtering Lesker2 Sputter
lesker2-sputter 		Semiclean
1.00 μm
one 4 inch wafer, one 6 inch wafer
°C - 800 °C

reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter