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Gallium Nitride
Chemical Formula:
GaN
Equipment Tabs
Deposition Equipment
Equipment name or Badger ID
Partial words okay.
Deposition Equipment
Equipment name & Badger ID
Cleanliness
Location
Material Thickness Range
Approved Materials supplied by Lab
Aixtron MOCVD - III-N system
aix-ccs
Clean (MOCVD)
SNF MOCVD Paul G Allen 213XA
0.00
-
5.00 μm
AlGaN
AlN
GaN
III-N materials
InAlN
InGaAlN
InGaN
InN
Etching Equipment
Equipment name or Badger ID
Partial words okay.
Etch Equipment
Equipment name & Badger ID
Cleanliness
Location
Primary Materials Etched
Other Materials Etched
Plasma Therm Versaline LL ICP Metal Etcher
PT-MTL
Flexible
SNF Cleanroom Paul G Allen L107
Metals or metal compounds with volatile byproducts
Al
GaN
Oxford III-V etcher
Ox-35
Flexible
SNF Cleanroom Paul G Allen L107
GaAs
AlGaN
AlInP
GaN
InGaP
InSb
Projects
Community Service Extension Request: P-GaN/AlGAN/GaN E-mode HEMT
-- (Report)
Community Service P-GaN/AlGAN/GaN E-mode HEMT Project Proposal
-- (Report)
Community Service Project P-GaN/AlGAN/GaN E-mode HEMT- Final Report
-- (Report)
Development of Thin Film Release of GaN using AlN and AlGaN Buffer Layers for MEMS Applications- Final Report
-- (Report)
MOCVD Growth Calibration for GaN LED on Silicon- Final Report
-- (Report)
Development of Thin Film Release of GaN using AlN and AlGaN Buffer layers for MEMs Applications- Final Presentation
-- (Presentation)
MOCVD Growth Calibration for GaN LED on Silicon- Final Presentation
-- (Presentation)
Community Service P-GaN/AlGAN/GaN E-mode HEMT
Improve the performance of MOCVD grown GaN-on-Si HEMT structure
MOCVD Regrown Ohmic Contacts to AlGaN/GaN Heterostructures
MOCVD Regrown Ohmic Contacts to AlGaN/GaN Heterostructures- Community Service