The following is a list of equipment where 4 inch round substrates are allowed.
Restricted to non-conductive films only
Reactor located inside glovebox
N and P doping available. For Si clean: SC1, SC2, HF dip. For Sapphire clean: SC1, SC2. For GaN template on Si or Sapphire: Piranha, SC1, SC2.
N and P doping available. For Si clean: SC1, SC2, HF dip. For III-V clean: HCl or HF dip.
For more than 300nm deposition, please contact Gabe Catalano <gcatalano@stanford.edu> in advance
Bakes wafers after resist coating.
Bakes wafers with resist after the development, called post-bake.
500Å to 300µm
N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr
5:1 reducing stepper
Convection in N2. Cure. Programmable.
CO2 drying after release of micromachined devices
Spray coating of resists