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4 inch wafer

Short Name: 
4"

The following is a list of equipment where 4 inch round substrates are allowed.

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Equipment name & NEMO ID Training Required & Charges Cleanliness Locationsort ascending Notes
CHA Solutions II Evaporator
cha-evap
Evaporator CHA Training Flexible SNF Paul G Allen L107 Cleanroom

For more than 300nm deposition, please contact Neel Mehta <nmehta26@stanford.edu> in advance

PlasmaTherm Versaline HDP CVD System
hdpcvd
PlasmaTherm Versaline HDP CVD System Training "All" SNF Paul G Allen L107 Cleanroom

To maintain cleanliness level there are cleans required for both the chamber and wafers prior to processing -

Substrates in clean category: Pre-Diffusion Clean

For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) .  Run Chamber clean (no dummies) and conditioning with clean dummies prior to run

Critical Point Dryer Tousimis Automegasamdri-936
cpd
Critical Point Dryer Training Flexible SNF Paul G Allen L107 Cleanroom

CO2 drying after release of micromachined devices

HMDS Vapor Prime Oven, YES
yes
YES Prime Oven Training "All" SNF Paul G Allen L107 Cleanroom

Two programs: Singe and HMDS prime or Singe only. No Resist allowed!

Wet Bench Clean_res- hotphos
wbclean_res-hotphos
Wet Bench Clean Piranha/HF/Phosphoric Training Clean SNF Paul G Allen L107 Cleanroom

Resist should have been removed

Wet Bench Clean 1
wbclean-1
Wet Bench Clean1and2 Training Clean SNF Paul G Allen L107 Cleanroom

No resist allowed. Resist should have been removed at the wbclean_res-piranha.

Oven (White)
white-oven
White Oven Training Flexible SNF Paul G Allen L107 Cleanroom

For LOL2000 bake or bakes which are not allowed in the other ovens and need higher temperatures, up to 200C, programmable.

Intlvac Evaporator
Intlvac_evap
Evaporator Intlvac Training Clean, Semiclean SNF Paul G Allen L107 Cleanroom
Oxford Plasma Pro ICP-RIE ALE
Ox-ALE
Oxford Plasma Pro ICP-RIE ALE Training Flexible SNF Paul G Allen L107 Cleanroom
Wet Bench Flexcorr 1
wbflexcorr-1
Wet Bench Flexcorr 1and2 and 3and4 Training Flexible SNF Paul G Allen L107 Cleanroom

Manual wet etching of non-standard materials. Hot plate available. GaAs allowed in personal labware only.

MRC Reactive Ion Etcher
mrc
MRC Reactive Ion Etcher Training Flexible SNF Paul G Allen L107 Cleanroom

Typically used for sputter etching; Single wafer, direct load system; wafers/ pieces can be directly placed on electrode

Oven BlueM 200°C to 430°C
bluem
Blue M Oven Training Flexible SNF Paul G Allen L107 Cleanroom

Convection in N2. Cure. Programmable.

SVG Resist Coat Track 2
svgcoat2
SVG Resist Coat Tracks 1 and 2 Training "All" SNF Paul G Allen L107 Cleanroom

Automatic HMDS, Resist spinning, and Bake. AZ5214IR Image Reversal.

Tystar Bank 1 Tube 2
B1T2 Flexible Oxide
Tystar Atmospheric Tube Training Flexible SNF Paul G Allen L107 Cleanroom
Oxford Plasma Pro ICP-RIE Ox
Ox-Ox
Oxford Plasma Pro ICP-RIE Ox Training Clean SNF Paul G Allen L107 Cleanroom
Headway 3 Manual Resist Spinner
headway3
Resist Coat (manual) Headway 3 Training "All" SNF Exfab Paul G Allen 104 Stinson
Ex Fab Develop Wet Bench
wbexfab_dev
WbExfab_Dev Training Flexible SNF Exfab Paul G Allen 104 Stinson

Manual development of resist in beakers. SNF approved developers only. No solvents!

Ex Fab Solvent Wet Bench
wbexfab_solv
WbExfab_Solv Training Flexible SNF Exfab Paul G Allen 104 Stinson
Finetech Lambda
flipchipbonder
Flip Chip Bonder Training Flexible SNF Exfab Paul G Allen 104 Stinson
Keyence Digital Microscope VHX-6000
keyence
Microscope Keyence Training "All" SNF Exfab Paul G Allen 104 Stinson

Pages

Equipment name & NEMO ID Technique Cleaning Required Cleanliness Primary Materials Etched Other Materials Etched Material Thickness Range Materials Lab Supplied Process Temperature Range Chemicals Gases Substrate Size Substrate Type Maximum Load
Tystar Bank 2 Tube 7 Nitride
B2T7 Flexible Nitride
Flexible
25.00 Å - 2.00 μm
420 °C - 800 °C
,
,
50
Tystar Bank 2 Tube 8 LTO
B2T8 Clean LTO
Clean
25.00 Å - 2.00 μm
300 °C - 500 °C
,
,
100
Tystar Bank 3 Tube 10 Nitride
B3T10 Clean Nitride
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
420 °C - 800 °C
,
,
50
Tystar Bank 3 Tube 11 TEOS
B3T11 Clean TEOS
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
420 °C - 630 °C
,
,
50
Tystar Bank 3 Tube 12 Poly
B3T12 Clean Poly
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
420 °C - 630 °C
,
,
50
Tystar Bank 3 Tube 9
B3T9 Clean Oxide
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
400 °C - 1100 °C
,
,
100
Wet Bench Clean 1
wbclean-1
Clean
,
,
25
Wet Bench Clean 2
wbclean-2
Clean
,
,
25
Wet Bench Clean_res- hotphos
wbclean_res-hotphos
Clean
,
,
Wet Bench Clean_res-hf
wbclean_res-hf
Clean
,
,
Wet Bench Clean_res-piranha
wbclean_res-piranha
Clean
,
,
Wet Bench CMOS Metal
wbclean3
Semiclean
,
,
25 wafers
Wet Bench Decontamination
wbdecon
Clean
,
,
Wet Bench Flexcorr 1
wbflexcorr-1
Flexible ,
,
,
,
,
,
,
,
,
,
Wet Bench Flexcorr 2
wbflexcorr-2
Flexible ,
,
,
,
,
,
,
,
,
,
Wet Bench Flexcorr 3
wbflexcorr-3
Flexible ,
,
,
,
,
,
,
,
,
Wet Bench Flexcorr 4
wbflexcorr-4
Flexible
Wet Bench Flexible Solvents
wbflexsolv
Flexible ,
,
,
,
,
,
,
,
,
,
Wet Bench Flexible Solvents 1
wbflexsolv-1
Flexible ,
,
,
,
,
,
,
,
,
,
Wet Bench Flexible Solvents 2
wbflexsolv-2
Flexible ,
,
,
,
,
,
,
,
,
,

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