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4 inch wafer

Short Name: 
4"

The following is a list of equipment where 4 inch round substrates are allowed.

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Equipment name & NEMO ID Training Required & Charges Cleanliness Locationsort ascending Notes
Wet Bench Solvent Lithography
lithosolv 		Lithography Solvent Bench Training Flexible SNF Paul G Allen L107 Cleanroom

Manual solvent cleaning of substrates or masks. Teflon coated metal tweezers cleaning.
Laurell Manual Resist Spinner
laurell-R 		Laurell Manual Resist Spinner Training "All" SNF Paul G Allen L107 Cleanroom

SU-8, LOL, Ebeam resists allowed. No Acetone allowed. 
Sensofar S-neox
s-neox 		Sensofar S-neox Training "All" SNF Paul G Allen L107 Cleanroom

non contact 3D optical profiling
Technics Asher
technics 		Technics Asher Training Flexible SNF Paul G Allen L107 Cleanroom
Tystar Bank 1 Tube 4 LTO
B1T4 Flexible LTO 		Tystar LPCVD Tube Training Flexible SNF Paul G Allen L107 Cleanroom
Wet Bench Clean_res-piranha
wbclean_res-piranha 		Wet Bench Clean Piranha/HF/Phosphoric Training Clean SNF Paul G Allen L107 Cleanroom

Resist will be removed
EVG 101 Spray Coater
evgspraycoat 		Spray Coater EVG 101 Training "All" SNF Paul G Allen L107 Cleanroom

Spray coating of resists
Samco PC300 Plasma Etch System
samco 		Samco Training Flexible SNF Paul G Allen L107 Cleanroom
Tystar Bank 3 Tube 11 TEOS
B3T11 Clean TEOS 		Tystar LPCVD Tube Training Clean SNF Paul G Allen L107 Cleanroom
AMAT Centurion Epitaxial System
epi2 		Epitaxial AMAT Centurion Training Clean SNF Paul G Allen L107 Cleanroom

N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr
Wet Bench Flexcorr 3
wbflexcorr-3 		Wet Bench Flexcorr 1and2 and 3and4 Training Flexible SNF Paul G Allen L107 Cleanroom

Manual wet etching of non-standard materials using acids or bases. Hot Plate available. GaAs not allowed.
SVG Resist Coat Track 1
svgcoat 		SVG Resist Coat Tracks 1 and 2 Training "All" SNF Paul G Allen L107 Cleanroom

Automatic Resist spinning and bake
Prometrix Resistivity Mapping System
prometrix 		Prometrix Training "All" SNF Paul G Allen L107 Cleanroom

3 Probe Heads for different cleanliness groups.
Lesker2 Sputter
lesker2-sputter 		Sputter Lesker 1&2 Training Semiclean SNF Paul G Allen L107 Cleanroom

reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter
Tystar Bank 2 Tube 8 LTO
B2T8 Clean LTO 		Tystar LPCVD Tube Training Clean SNF Paul G Allen L107 Cleanroom
PlasmaTherm Shuttlelock PECVD System
ccp-dep 		PlasmaTherm Shuttlelock PECVD System Training "All" SNF Paul G Allen L107 Cleanroom

To maintain cleanliness level, cleans of both the chamber and wafers are required prior to processing -

Substrates in clean category: Pre-Diffusion Clean

For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) . Run Chamber clean (no dummies) and conditioning with clean dummies prior to run
Wet Bench Flexible Solvents
wbflexsolv 		Wet Bench Flexible Solvents 1 and 2 Training Flexible SNF Paul G Allen L107 Cleanroom

Manual solvent cleaning of substrates or resist removal.
SPTS uetch vapor etch
uetch 		SPTS uetch vapor etch Training "All" SNF Paul G Allen L107 Cleanroom

Pieces need a carrier wafer; Isotropic Etching
Flexus 2320 Stress Tester
stresstest 		Stress Tester Flexus 2320 Training "All" SNF Paul G Allen L107 Cleanroom
AJA2 Evaporator
aja2-evap 		Evaporator AJA2 Training Flexible SNF Paul G Allen L107 Cleanroom

For more than 300nm deposition, please contact Gabe Catalano <gcatalano@stanford.edu> in advance

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Equipment name & NEMO ID Technique Cleaning Required Cleanliness Primary Materials Etched Other Materials Etched Material Thickness Range Materials Lab Supplied Resist Developer Process Temperature Range Gases Sample Size Limits Substrate Size Substrate Type Maximum Load
Prometrix Resistivity Mapping System
prometrix
"All"
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(GaN)
,
(III-V)
,
(GaAs)
 1
RTA AllWin 610
aw610_l
Pre-Diffusion Clean Clean
21 °C - 1150 °C
(Si)
,
(SiGe)
,
(SiO2)
 1 wafer
RTA AllWin 610
aw610_r
Flexible
21 °C - 1150 °C
(Si)
,
(SiGe)
,
(SiO2)
Samco PC300 Plasma Etch System
samco
Flexible
20 ºC
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(SiC)
,
(GaN)
,
(III-V)
,
(GaAs)
,
(Various)
,
(Various)
,
(LiNb)
,
(Various)
 Four 4" wafers or two 6" wafers and one 8" wafer
Savannah ALD
savannah
Flexible
1.00 Å - 50.00 nm
24 °C - 250 °C
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(SiC)
,
(GaN)
,
(III-V)
,
(Various)
,
(Various)
,
(LiNb)
,
(Various)
SEM -Zeiss Merlin
sem-merlin
"All"
0.00 mm - 35.00 mm
6 in wafer
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(SiC)
,
(GaN)
,
(III-V)
,
(GaAs)
,
(LiNb)
 one
Sensofar S-neox
s-neox
"All"
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(GaN)
,
(III-V)
,
(GaAs)
 1
Sinton Lifetime Tester
sinton-lifetime-tester
Flexible
SPTS uetch vapor etch
uetch
"All"
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(SiC)
,
(GaN)
,
(III-V)
,
(GaAs)
 1
SVG Develop Track 1
svgdev
"All"
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(GaN)
,
(III-V)
,
(GaAs)
 25 4 inch wafers
SVG Develop Track 2
svgdev2
"All"
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(GaN)
,
(III-V)
,
(GaAs)
 25 4 inch wafers
SVG Resist Coat Track 1
svgcoat
"All"
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(GaN)
,
(III-V)
,
(GaAs)
 25 4 inch wafers
SVG Resist Coat Track 2
svgcoat2
"All"
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(GaN)
,
(III-V)
,
(GaAs)
 25 4 inch wafers
Technics Asher
technics
Flexible
(Si)
,
(SiO2)
,
(SiO2)
 Four 4" wafers to pieces, one 6" or 8" wafer
Tystar Bank 1 Tube 1 Anneal
B1T1 Flexible Oxide
Flexible
25.00 Å - 2.00 μm
400 °C - 1100 °C
(Si)
,
(SiGe)
,
(SiO2)
 100
Tystar Bank 1 Tube 2
B1T2 Flexible Oxide
Flexible
25.00 Å - 2.00 μm
400 °C - 1100 °C
(Si)
,
(SiGe)
,
(SiO2)
 100
Tystar Bank 1 Tube 3 Poly
B1T3 Flexible Poly
Flexible
25.00 Å - 2.00 μm
420 °C - 630 °C
(Si)
,
(SiGe)
,
(SiO2)
,
(Ge)
,
(SiC)
,
(III-V)
 100
Tystar Bank 1 Tube 4 LTO
B1T4 Flexible LTO
Flexible
25.00 Å - 2.00 μm
300 °C - 500 °C
(Si)
,
(SiGe)
,
(SiO2)
,
(Ge)
,
(SiC)
,
(III-V)
 100
Tystar Bank 2 Tube 5
B2T5 Clean Anneal
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
400 °C - 1100 °C
(Si)
,
(SiGe)
,
(SiO2)
 100
Tystar Bank 2 Tube 6
B2T6 Clean Oxide
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
400 °C - 1100 °C
(Si)
,
(SiGe)
,
(SiO2)
 100

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