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4 inch wafer

Short Name: 
4"

The following is a list of equipment where 4 inch round substrates are allowed.

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Equipment name & NEMO IDsort ascending Training Required & Charges Cleanliness Location Notes
AJA Evaporator
aja-evap 		Evaporator AJA training Flexible SNF Exfab Paul G Allen 155A Venice

For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance
Aixtron MOCVD - III-V system
aix200 		MOCVD - III-V Aixtron training Flexible SNF MOCVD Paul G Allen 213XA

N and P doping available.
For Si clean: SC1, SC2, HF dip.
For III-V clean: HCl or HF dip.
Aixtron MOCVD - III-N system
aix-ccs 		MOCVD - III-N Aixtron training Clean (MOCVD) SNF MOCVD Paul G Allen 213XA

N and P doping available.
For Si clean: SC1, SC2, HF dip.
For Sapphire clean: SC1, SC2.
For GaN template on Si or Sapphire: Piranha, SC1, SC2.
Aixtron Black Magic graphene CVD furnace
aixtron-graphene 		CVD graphene furnace Aixtron Black Magic training Flexible SNF Exfab Paul G Allen L119 Año Nuevo

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Equipment name & NEMO IDsort ascending Technique Cleaning Required Cleanliness Material Thickness Range Materials Lab Supplied Process Temperature Range Gases Substrate Size Substrate Type Maximum Load
AJA Evaporator
aja-evap
Flexible
0.00 - 300.00 nm
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(SiC)
,
(GaN)
,
(III-V)
,
(GaAs)
,
(Various)
,
(Various)
 4"x3 or 6"x1 wafers or pieces
Aixtron MOCVD - III-V system
aix200
Pre-Diffusion Clean Flexible
0.00 - 5.00 μm
300 °C - 800 °C
(Si)
,
(SiO2)
,
(Al2O3)
,
(GaN)
,
(III-V)
,
(GaAs)
 4"x1 wafer or 2"x1 wafer or 4 pieces
Aixtron MOCVD - III-N system
aix-ccs
Clean (MOCVD)
0.00 - 5.00 μm
400 °C - 1300 °C
(Si)
,
(Al2O3)
,
(SiC)
,
(GaN)
 4"x1, 2"X3, pieces
Aixtron Black Magic graphene CVD furnace
aixtron-graphene
Flexible
800 °C - 1100 °C
(Si)
,
(Various)
 1x4" wafer or Copper/Nickel foil

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