4 inch wafer

Short Name:

The following is a list of equipment where 4 inch round substrates are allowed.

Equipment Tables

Equipment name & NEMO ID	Technique	Cleanliness	Primary Materials Etched	Other Materials Etched	Material Thickness Range	Materials Lab Supplied	Exposure Wavelength	Resist	Developer	Process Temperature Range	Chemicals	Gases	Substrate Size	Substrate Type	Maximum Load
Intlvac Evaporator Intlvac_evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation	Clean, Semiclean			0.00 - 0.50 μm	Al Co Cr Ge Hf Nb Ni Pd Si Ta Ti V W Zr Moly							Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2)	12 4 inch wafers, 2 6 inch wafers
HMDS Vapor Prime Oven, YES yes	Photolithography > Wafer preparation before resist > Wafer Prime (HMDS) Photolithography > Wafer preparation before resist > Singe	"All"								150 ºC	[(CH₃)₃Si]₂NH		Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs)
Heidelberg3 heidelberg3	Photolithography > Exposure > Direct Write	"All"											Pieces 2" 3" 4"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Lithium Niobate (LiNb) Other (ProMCom approval required) (Various)	1
Heidelberg MLA 150 - 2 heidelberg2	Photolithography > Exposure > Direct Write	"All"					375 nm						Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs) Polymer (Various) Carbon Polymer Based (Various) Lithium Niobate (LiNb)	1
Heidelberg MLA 150 heidelberg	Photolithography > Exposure > Direct Write	"All"					405 nm						Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs) Polymer (Various) Carbon Polymer Based (Various) Lithium Niobate (LiNb)	1
Headway Manual Resist Spinner headway2	Photolithography > Resist coat > Resist Coat (manual)	"All"						AZ5214IR Shipley 3612 resist SPR 955 CM-.7 resist SPR220-3 resist SPR220-7 (C₅O₂H₈)_n					Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs)	one piece or wafer
Headway 3 Manual Resist Spinner headway3	Photolithography > Resist coat > Resist Coat (manual)	"All"						Resists Shipley 3612 resist SPR220-3 resist SPR220-7					Pieces 2" 3" 4"		1 piece or wafer
Gasonics Aura Asher gasonics	Cleaning > Resist Removal > Dry Resist Removal > Downstream/Remote Plasma Resist Removal Etching > Dry Etching > Downstream/Remote Plasma Etching	Clean, Semiclean	Resist	PI								O₂	4"	Silicon (Si)	25
Flexus 2320 Stress Tester stresstest	Characterization > Film Stress Measurement	"All"											3" 4" 6" 8"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs)	1
First Nano carbon nanotube CVD furnace cvd-nanotube	Deposition > Chemical Vapor Deposition (CVD) > Carbon Nanotube CVD Growth	Flexible				CNT				800 °C - 1100 °C		Ar C₂H₅OH CH₄ H₂ O₂	Pieces 2" 3" 4"	Silicon (Si) Quartz (SiO2)	1x4" wafer or multiple pieces
Finetech Lambda flipchipbonder	Bonding	Flexible								°C - 400 °C			Pieces 4"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge)	1
Fiji 3 ALD fiji3	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD	Flexible			1.00 Å - 50.00 nm	SiO₂ Various Dielectrics Alumina Hafnia Titania				24 °C - 350 °C		Ar H₂ N₂ NH₃ O₂	Pieces 2" 3" 4" 6" 8"	Silicon (Si) Silicon Germanium (SiGe) III-V (III-V)
Fiji 2 ALD fiji2	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD	Flexible			1.00 Å - 50.00 nm	Metal oxides Ga₂O₃ HfN In₂O₃ Ni_xO_y Pt Ru Si3N4 SiO₂ SnO₂ SrO Ta₂O₅ TiN Various Dielectrics Alumina Hafnia ITO Moly Oxide Titania Zirconia				24 °C - 350 °C		Ar H₂ N₂ O₂	Pieces 2" 3" 4" 6" 8"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Polymer (Various) Carbon Polymer Based (Various) Lithium Niobate (LiNb) Other (ProMCom approval required) (Various)
Fiji 1 ALD fiji1	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD	Semiclean			1.00 Å - 50.00 nm	Metal oxides HfN Pt Ru SiO₂ Ta₂O₅ TaN TiN Various Dielectrics Alumina Hafnia Titania Zirconia				24 °C - 350 °C		Ar H₂ N₂ NH₃ O₂	Pieces 2" 3" 4" 6" 8"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2)
Ex Fab Solvent Wet Bench wbexfab_solv	Cleaning > Solvent Cleaning Patterning > Metal Lift-off Wet Chemical Processing	Flexible									Solvents		Pieces 2" 3" 4" 6" 8" Other
Ex Fab Develop Wet Bench wbexfab_dev	Photolithography > Resist Develop > Resist Develop (manual) Wet Chemical Processing	Flexible							AZ 1:1 MF-26A developer				Pieces 2" 3" 4" 6" 8" 12" Cones Disks Other
EVG 101 Spray Coater evgspraycoat	Photolithography > Resist coat > Resist Spray Coat (manual)	"All"						Resists					Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂)	1
DISCO Wafer Saw DISCO wafersaw	Machining > Wafer Saw	Flexible											Pieces 2" 3" 4" 6" 8"	Silicon (Si) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V)	1x4", 1x6" or 1x8" wafer, or pieces
Critical Point Dryer Tousimis Automegasamdri-936 cpd	Drying > CO2 Drying Wet Chemical Processing	Flexible									CO₂		Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs)
CHA Solutions II Evaporator cha-evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation	Flexible			0.00 - 300.00 nm	Ag Al Au Cr Cu Ni Pd Pt Ti							Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Germanium (Ge) Other (ProMCom approval required) (Various)	4"x15 or 6"x3 wafers or pieces

4 inch wafer

Equipment Tables

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