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Gallium Arsenide

Chemical Formula:

GaAs

Equipment name & NEMO ID	Training Required & Charges	Cleanliness	Location	Notes
Oven 90°C prebake oven90	Resist Prebake Oven 90°C Training	"All"	SNF Paul G Allen L107 Cleanroom	Bakes wafers after resist coating.
Aixtron MOCVD - III-V system aix200	MOCVD - III-V Aixtron training	Flexible	SNF MOCVD Paul G Allen 213XA	N and P doping available. For Si clean: SC1, SC2, HF dip. For III-V clean: HCl or HF dip.

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Equipment name & NEMO ID	Technique	Cleanliness	Primary Materials Etched	Gases	Substrate Size	Substrate Type	Maximum Load
Woollam woollam	Characterization > Ellipsometry	"All"			Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb) , (Various)	1
Xactix Xenon Difluoride Etcher xactix	Etching > Vapor Etching	"All"	Ge Si SiGe	N₂ XeF₂	Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	1

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