Gallium Arsenide

Convection in N2. Cure. Programmable.

Bakes wafers with resist after the development, called post-bake.

Manual Film Thickness Measurement. Single or dual layer transparent films > 300 Å

reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter

1:1 Contact Aligner. Backside align, including IR.

Direct Write

Adjustable spin speeds, spin time. SNF-acceptable resists or polymers. Ebeam resists