Quartz

Chemical Formula:

SiO2

Equipment name & NEMO ID	Training Required & Charges	Cleanliness	Location	Notes
SVG Resist Coat Track 2 svgcoat2	SVG Resist Coat Tracks 1 and 2 Training	"All"	SNF Paul G Allen L107 Cleanroom	Automatic HMDS, Resist spinning, and Bake. AZ5214IR Image Reversal.
Tystar Bank 1 Tube 1 Anneal B1T1 Flexible Oxide	Tystar Atmospheric Tube Training	Flexible	SNF Paul G Allen L107 Cleanroom
Savannah ALD savannah	ALD Savannah Training	Flexible	SNF Paul G Allen L107 Cleanroom
Wet Bench Solvent Lithography lithosolv	Lithography Solvent Bench Training	Flexible	SNF Paul G Allen L107 Cleanroom	Manual solvent cleaning of substrates or masks. Teflon coated metal tweezers cleaning.
Oven 110°C post-bake oven110	Resist Postbake Oven 110°C Training	"All"	SNF Paul G Allen L107 Cleanroom	Bakes wafers with resist after the development, called post-bake.
Wet Bench Clean 2 wbclean-2	Wet Bench Clean1and2 Training	Clean	SNF Paul G Allen L107 Cleanroom	No resist allowed. Resist should have been removed at the wbclean_res-piranha
Oxford Plasma Pro ICP-RIE Ox-gen	Ox-gen etcher Training	Clean	SNF Paul G Allen L107 Cleanroom
Woollam woollam	Woollam Training	"All"	SNF Paul G Allen L107 Cleanroom
Wet Bench Clean_res-piranha wbclean_res-piranha	Wet Bench Clean Piranha/HF/Phosphoric Training	Clean	SNF Paul G Allen L107 Cleanroom	Resist will be removed
Oven 90°C prebake oven90	Resist Prebake Oven 90°C Training	"All"	SNF Paul G Allen L107 Cleanroom	Bakes wafers after resist coating.
SVG Develop Track 2 svgdev2	SVG Resist Develop tracks 1 and 2 Training	"All"	SNF Paul G Allen L107 Cleanroom	Automatic development.
Tystar Bank 1 Tube 3 Poly B1T3 Flexible Poly	Tystar LPCVD Tube Training	Flexible	SNF Paul G Allen L107 Cleanroom
Wet Bench Flexcorr 3 wbflexcorr-3	Wet Bench Flexcorr 1and2 and 3and4 Training	Flexible	SNF Paul G Allen L107 Cleanroom	Manual wet etching of non-standard materials using acids or bases. Hot Plate available. GaAs not allowed.
Karl Suss MA-6 Contact Aligner karlsuss2	Contact Aligner Karl Suss MA-6 Training	"All"	SNF Paul G Allen L107 Cleanroom	1:1 Contact Aligner. Backside align.
Tystar Bank 3 Tube 12 Poly B3T12 Clean Poly	Tystar LPCVD Tube Training	Clean	SNF Paul G Allen L107 Cleanroom
Headway Manual Resist Spinner headway2	Resist Coat (manual) Headway Manual Training	"All"	SNF Paul G Allen L107 Cleanroom	Adjustable spin speeds, spin time. SNF-acceptable resists or polymers. Ebeam resists
Wet Bench Flexible Solvents wbflexsolv	Wet Bench Flexible Solvents 1 and 2 Training	Flexible	SNF Paul G Allen L107 Cleanroom	Manual solvent cleaning of substrates or resist removal.
Karl Suss MA-6 Contact Aligner karlsuss	Contact Aligner Karl Suss MA-6 Training	"All"	SNF Paul G Allen L107 Cleanroom	1:1 Contact Aligner. Backside align, including IR.
Heidelberg MLA 150 - 2 heidelberg2	Heidelberg Training	"All"	SNF Paul G Allen L107 Cleanroom	Direct Write
Tystar Bank 3 Tube 10 Nitride B3T10 Clean Nitride	Tystar LPCVD Tube Training	Clean	SNF Paul G Allen L107 Cleanroom

Pages

Equipment name & NEMO ID	Technique	Cleaning Required	Cleanliness	Primary Materials Etched	Other Materials Etched	Material Thickness Range	Materials Lab Supplied	Resist	Developer	Process Temperature Range	Gases	Sample Size Limits	Substrate Size	Substrate Type	Maximum Load
Profilometer AlphaStep D-300 alphastep2	Characterization > Surface Analysis > Profilometer > Step Profile		Flexible										Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb)	1
Prometrix Resistivity Mapping System prometrix	Characterization > Sheet Resistance Measurement		"All"										2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1
RTA AllWin 610 aw610_l	Annealing & Oxidation > Rapid Thermal Annealing	Pre-Diffusion Clean	Clean							21 °C - 1150 °C	4% H₂ in N₂ Ar N₂ NH₃ O₂		Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2)	1 wafer
RTA AllWin 610 aw610_r	Annealing & Oxidation > Rapid Thermal Annealing		Flexible							21 °C - 1150 °C	4% H₂ in N₂ Ar N₂ NH₃ O₂		Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2)
Samco PC300 Plasma Etch System samco	Cleaning > Resist Removal > Dry Resist Removal > Downstream/Remote Plasma Resist Removal Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Plasma Mode Etching Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE)		Flexible	Resist	dimethylpolysiloxane Si Si3N4 SiO₂ SiON Various polymers PI					20 ºC	CF₄ O₂ SF₆		Pieces 2" 3" 4" 6" 8" Other	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb) , (Various)	Four 4" wafers or two 6" wafers and one 8" wafer
Savannah ALD savannah	Deposition > Atomic Layer Deposition (ALD) > Thermal ALD		Flexible			1.00 Å - 50.00 nm	Metal oxides Ga₂O₃ SnO₂ Various Dielectrics ZnO₃ Alumina AZO Hafnia Titania Zirconia			24 °C - 250 °C	N₂		Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (Various) , (Various) , (LiNb) , (Various)
SEM -Zeiss Merlin sem-merlin	Characterization > Surface Analysis > Microscopy > Scanning Electron Microscopy (SEM)		"All"			0.00 mm - 35.00 mm						6 in wafer	Pieces 2" 3" 4" 6" Disks	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (LiNb)	one
Sensofar S-neox s-neox	Characterization > Surface Analysis > Profilometer > Interferometry Characterization > Surface Analysis > Profilometer > Optical Profilometer		"All"										Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1
SPTS uetch vapor etch uetch	Etching > Vapor Etching		"All"	SiO₂							C₂H₅OH HF vapor		Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	1
SVG Develop Track 1 svgdev	Photolithography > Resist Develop > Resist Develop (automatic)		"All"						MF-26A developer				4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	25 4 inch wafers
SVG Develop Track 2 svgdev2	Photolithography > Resist Develop > Resist Develop (automatic)		"All"						MF-26A developer				4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	25 4 inch wafers
SVG Resist Coat Track 1 svgcoat	Photolithography > Resist coat > Resist Coat (automatic)		"All"					Shipley 3612 resist SPR220-3 resist SPR220-7					4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	25 4 inch wafers
SVG Resist Coat Track 2 svgcoat2	Photolithography > Resist coat > Resist Coat (automatic)		"All"					AZ5214IR Shipley 3612 resist SPR 955 CM-.7 resist					4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	25 4 inch wafers
Technics Asher technics	Etching > Dry Etching Cleaning > Resist Removal > Dry Resist Removal		Flexible	Resist	dimethylpolysiloxane poly(p-xylylene) PI						O₂		Pieces 4" 6" 8"	(Si) , (SiO2) , (SiO₂)	Four 4" wafers to pieces, one 6" or 8" wafer
Tystar Bank 1 Tube 1 Anneal B1T1 Flexible Oxide	Annealing & Oxidation > Oxide Growth (furnace)		Flexible			25.00 Å - 2.00 μm				400 °C - 1100 °C	4% H₂ in N₂ N₂ O₂		4" 6"	(Si) , (SiGe) , (SiO2)	100
Tystar Bank 1 Tube 2 B1T2 Flexible Oxide	Annealing & Oxidation > Annealing (furnace) Annealing & Oxidation > Oxide Growth (furnace)		Flexible			25.00 Å - 2.00 μm	SiO₂			400 °C - 1100 °C	4% H₂ in N₂ N₂ O₂		4" 6"	(Si) , (SiGe) , (SiO2)	100
Tystar Bank 1 Tube 3 Poly B1T3 Flexible Poly	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD		Flexible			25.00 Å - 2.00 μm	Ge Si SiGe Poly Silicon			420 °C - 630 °C	B₂H₆ GeH₄ N₂ PH₃ SiH₄		4" 6"	(Si) , (SiGe) , (SiO2) , (Ge) , (SiC) , (III-V)	100
Tystar Bank 1 Tube 4 LTO B1T4 Flexible LTO	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD		Flexible			25.00 Å - 2.00 μm	SiO₂			300 °C - 500 °C	N₂ O₂ PH₃ SiH₄		4" 6"	(Si) , (SiGe) , (SiO2) , (Ge) , (SiC) , (III-V)	100
Tystar Bank 2 Tube 5 B2T5 Clean Anneal	Annealing & Oxidation > Oxide Growth (furnace)	Pre-Diffusion Clean	Clean			25.00 Å - 2.00 μm				400 °C - 1100 °C	4% H₂ in N₂ N₂ O₂		4" 6"	(Si) , (SiGe) , (SiO2)	100
Tystar Bank 2 Tube 6 B2T6 Clean Oxide	Annealing & Oxidation > Oxide Growth (furnace)	Pre-Diffusion Clean	Clean			25.00 Å - 2.00 μm	SiO₂			400 °C - 1100 °C	4% H₂ in N₂ N₂ O₂		4" 6"	(Si) , (SiGe) , (SiO2)	100