Quartz

Chemical Formula:

SiO2

Equipment Tables

Equipment name & NEMO ID	Technique	Cleanliness	Primary Materials Etched	Process Temperature Range	Chemicals	Gases	Substrate Size	Substrate Type	Maximum Load
Wet Bench Resist Strip wbresstrip-1	Cleaning > Resist Removal > Wet Resist Removal Wet Chemical Processing	Clean (Ge), Semiclean, Flexible	Resist	20 °C - 60 °C	PRS-1000 SRS-100		Pieces 2" 3" 4"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC)	25 4 inch wafers
Wet Bench Solvent Lithography lithosolv	Cleaning > Solvent Cleaning Wet Chemical Processing	Flexible			Solvents		Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs)
Woollam woollam	Characterization > Ellipsometry	"All"					Pieces 2" 3" 4" 6" 8"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs) Polymer (Various) Carbon Polymer Based (Various) Lithium Niobate (LiNb) Other (ProMCom approval required) (Various)	1
Xactix Xenon Difluoride Etcher xactix	Etching > Vapor Etching	"All"	Ge Si SiGe			N₂ XeF₂	Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs)	1