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Silicon Carbide

Chemical Formula:

SiC

Silicon carbide can deposited in the ccp system by the reaction between silane and methane.

Equipment Tabs

Deposition Equipment

Deposition Equipment
Equipment name & Badger ID	Cleanliness	Location	Material Thickness Range	Approved Materials supplied by Lab
PlasmaTherm Shuttlelock PECVD System ccp-dep	All	SNF Cleanroom Paul G Allen L107	100.00 Å - 4.00 μm	Si Si3N4 SiC SiO₂ SiON
PlasmaTherm Versaline HDP CVD System hdpcvd	All	SNF Cleanroom Paul G Allen L107	500.00 Å - 4.00 μm	Si Si3N4 SiC SiO₂ SiON

Etching Equipment

Etch Equipment
Equipment name & Badger ID	Cleanliness	Location	Primary Materials Etched	Other Materials Etched
AMAT P5000 Etcher p5000etch	Clean Clean (Ge) Semiclean	SNF Cleanroom Paul G Allen L107	Si Si3N4 SiGe SiO₂ SiON	C C C dimethylpolysiloxane poly(p-xylylene) SiC Ti Various C-based W WSi₂ PI Resist Ti Tungsten
Oxford Dielectric Etcher oxford-rie	Flexible	SNF Cleanroom Paul G Allen L107	Si3N4 SiC SiO₂ PI	C
Plasma Therm Versaline LL ICP Dielectric Etcher PT-Ox	Flexible	SNF Cleanroom Paul G Allen L107	C Si3N4 SiC SiO₂	Various C-based

Projects