Skip to content Skip to navigation

Silicon Germanium

Chemical Formula: 
SiGe
Subscribe to
Equipment name & NEMO ID Training Required & Charges Cleanliness Locationsort descending Notes
SVG Resist Coat Track 2
svgcoat2
SVG Resist Coat Tracks 1 and 2 Training All SNF Cleanroom Paul G Allen L107

Automatic HMDS, Resist spinning, and Bake. AZ5214IR Image Reversal.

Oxford Plasma Pro ICP-RIE
Ox-gen
Ox-gen etcher Training Clean SNF Cleanroom Paul G Allen L107
Headway Manual Resist Spinner
headway2
Resist Coat (manual) Headway Manual Training All SNF Cleanroom Paul G Allen L107

Adjustable spin speeds, spin time. SNF-acceptable resists or polymers. Ebeam resists

Wet Bench Flexible Solvents
wbflexsolv
Wet Bench Flexible Solvents 1 and 2 Training Flexible SNF Cleanroom Paul G Allen L107

Manual solvent cleaning of substrates or resist removal.

Karl Suss MA-6 Contact Aligner
karlsuss2
Contact Aligner Karl Suss MA-6 Training All SNF Cleanroom Paul G Allen L107

1:1 Contact Aligner.
Backside align.

Wet Bench Clean 2
wbclean-2
Wet Bench Clean1and2 Training Clean SNF Cleanroom Paul G Allen L107

No resist allowed. Resist should have been removed at the wbclean_res-piranha

Tystar Bank 1 Tube 3 Poly
B1T3 Flexible Poly
Tystar LPCVD Tube Training Flexible SNF Cleanroom Paul G Allen L107
Critical Point Dryer Tousimis Automegasamdri-936
cpd
Critical Point Dryer Training Flexible SNF Cleanroom Paul G Allen L107

CO2 drying after release of micromachined devices

Karl Suss MA-6 Contact Aligner
karlsuss
Contact Aligner Karl Suss MA-6 Training All SNF Cleanroom Paul G Allen L107

1:1 Contact Aligner.
Backside align, including IR.

SVG Develop Track 2
svgdev2
SVG Resist Develop tracks 1 and 2 Training All SNF Cleanroom Paul G Allen L107

Automatic development.

Tystar Bank 3 Tube 12 Poly
B3T12 Clean Poly
Tystar LPCVD Tube Training Clean SNF Cleanroom Paul G Allen L107
PlasmaTherm Shuttlelock PECVD System
ccp-dep
PlasmaTherm Shuttlelock PECVD System Training All SNF Cleanroom Paul G Allen L107

To maintain cleanliness level, cleans of both the chamber and wafers are required prior to processing -

Substrates in clean category: Pre-Diffusion Clean

For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) . Run Chamber clean (no dummies) and conditioning with clean dummies prior to run

Wet Bench Clean 1
wbclean-1
Wet Bench Clean1and2 Training Clean SNF Cleanroom Paul G Allen L107

No resist allowed. Resist should have been removed at the wbclean_res-piranha.

ASML PAS 5500/60 i-line Stepper
asml
Stepper ASML PAS 5500/60 i-line Training All SNF Cleanroom Paul G Allen L107

5:1 reducing stepper

Tystar Bank 3 Tube 10 Nitride
B3T10 Clean Nitride
Tystar LPCVD Tube Training Clean SNF Cleanroom Paul G Allen L107
Lakeshore Hall Measurement System
LakeshoreHall
Lakeshore Hall Measurement System training All SNF Exfab Paul G Allen 151 Ocean
micromanipulator6000 IV-CV probe station
micromanipulator6000
micromanipulator6000 IV-CV probe station Training All SNF Exfab Paul G Allen 151 Ocean
LEI1500 Contactless Sheet Resistance Mapping
eddycurrent
LEI1500 Contactless Sheet Resistance Mapping Training All SNF Exfab Paul G Allen 151 Ocean
AJA Evaporator
aja-evap
Evaporator AJA training Flexible SNF Exfab Paul G Allen 155A Venice

For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance

Lesker Sputter
lesker-sputter
Sputter Lesker 1&2 Training Flexible SNF Exfab Paul G Allen 155A Venice

reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter

Pages

Equipment name & NEMO ID Technique Cleaning Required Cleanliness Primary Materials Etched Other Materials Etched Material Thickness Range Materials Lab Supplied Developer Process Temperature Range Chemicals Gases Substrate Size Substrate Type Maximum Load
Tystar Bank 3 Tube 11 TEOS
B3T11 Clean TEOS
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
420 °C - 630 °C
,
,
50
Tystar Bank 3 Tube 12 Poly
B3T12 Clean Poly
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
420 °C - 630 °C
,
,
50
Tystar Bank 3 Tube 9
B3T9 Clean Oxide
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
400 °C - 1100 °C
,
,
100
Wet Bench Clean 1
wbclean-1
Clean
,
,
25
Wet Bench Clean 2
wbclean-2
Clean
,
,
25
Wet Bench Clean_res- hotphos
wbclean_res-hotphos
Clean
,
,
Wet Bench Clean_res-hf
wbclean_res-hf
Clean
,
,
Wet Bench Clean_res-piranha
wbclean_res-piranha
Clean
,
,
Wet Bench CMOS Metal
wbclean3
Semiclean
,
,
25 wafers
Wet Bench Decontamination
wbdecon
Clean
,
,
Wet Bench Flexcorr 1
wbflexcorr-1
Flexible ,
,
,
,
,
,
,
,
,
,
Wet Bench Flexcorr 2
wbflexcorr-2
Flexible ,
,
,
,
,
,
,
,
,
,
Wet Bench Flexcorr 3
wbflexcorr-3
Flexible ,
,
,
,
,
,
,
,
,
Wet Bench Flexible Solvents
wbflexsolv
Flexible ,
,
,
,
,
,
,
,
,
,
Wet Bench Flexible Solvents 1
wbflexsolv-1
Flexible ,
,
,
,
,
,
,
,
,
,
Wet Bench Flexible Solvents 2
wbflexsolv-2
Flexible ,
,
,
,
,
,
,
,
,
,
Wet Bench Miscellaneous
wbmiscres
Flexible ,
,
,
,
,
,
,
,
Wet Bench Resist Strip
wbresstrip-1
Clean (Ge), Semiclean, Flexible
20 °C - 60 °C
,
,
,
,
,
,
25 4 inch wafers
Wet Bench Solvent Lithography
lithosolv
Flexible ,
,
,
,
,
,
,
,
Woollam
woollam
All ,
,
,
,
,
,
,
,
,
,
,
,
,
1

Pages