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Silicon Germanium

Chemical Formula: 
SiGe
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Equipment name & NEMO ID Training Required & Charges Cleanliness Locationsort ascending Notes
Oven 90°C prebake
oven90
Resist Prebake Oven 90°C Training All SNF Cleanroom Paul G Allen L107

Bakes wafers after resist coating.

SVG Resist Coat Track 2
svgcoat2
SVG Resist Coat Tracks 1 and 2 Training All SNF Cleanroom Paul G Allen L107

Automatic HMDS, Resist spinning, and Bake. AZ5214IR Image Reversal.

Oxford Plasma Pro ICP-RIE
Ox-gen
Ox-gen etcher Training Clean SNF Cleanroom Paul G Allen L107
Headway Manual Resist Spinner
headway2
Resist Coat (manual) Headway Manual Training All SNF Cleanroom Paul G Allen L107

Adjustable spin speeds, spin time. SNF-acceptable resists or polymers. Ebeam resists

Wet Bench Flexible Solvents
wbflexsolv
Wet Bench Flexible Solvents 1 and 2 Training Flexible SNF Cleanroom Paul G Allen L107

Manual solvent cleaning of substrates or resist removal.

Karl Suss MA-6 Contact Aligner
karlsuss2
Contact Aligner Karl Suss MA-6 Training All SNF Cleanroom Paul G Allen L107

1:1 Contact Aligner.
Backside align.

Wet Bench Clean 2
wbclean-2
Wet Bench Clean1and2 Training Clean SNF Cleanroom Paul G Allen L107

No resist allowed. Resist should have been removed at the wbclean_res-piranha

Tystar Bank 1 Tube 3 Poly
B1T3 Flexible Poly
Tystar LPCVD Tube Training Flexible SNF Cleanroom Paul G Allen L107
Critical Point Dryer Tousimis Automegasamdri-936
cpd
Critical Point Dryer Training Flexible SNF Cleanroom Paul G Allen L107

CO2 drying after release of micromachined devices

Karl Suss MA-6 Contact Aligner
karlsuss
Contact Aligner Karl Suss MA-6 Training All SNF Cleanroom Paul G Allen L107

1:1 Contact Aligner.
Backside align, including IR.

SVG Develop Track 2
svgdev2
SVG Resist Develop tracks 1 and 2 Training All SNF Cleanroom Paul G Allen L107

Automatic development.

Tystar Bank 3 Tube 12 Poly
B3T12 Clean Poly
Tystar LPCVD Tube Training Clean SNF Cleanroom Paul G Allen L107
PlasmaTherm Shuttlelock PECVD System
ccp-dep
PlasmaTherm Shuttlelock PECVD System Training All SNF Cleanroom Paul G Allen L107

To maintain cleanliness level, cleans of both the chamber and wafers are required prior to processing -

Substrates in clean category: Pre-Diffusion Clean

For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) . Run Chamber clean (no dummies) and conditioning with clean dummies prior to run

Wet Bench Clean 1
wbclean-1
Wet Bench Clean1and2 Training Clean SNF Cleanroom Paul G Allen L107

No resist allowed. Resist should have been removed at the wbclean_res-piranha.

ASML PAS 5500/60 i-line Stepper
asml
Stepper ASML PAS 5500/60 i-line Training All SNF Cleanroom Paul G Allen L107

5:1 reducing stepper

Tystar Bank 3 Tube 10 Nitride
B3T10 Clean Nitride
Tystar LPCVD Tube Training Clean SNF Cleanroom Paul G Allen L107
Wet Bench Clean_res- hotphos
wbclean_res-hotphos
Wet Bench Clean Piranha/HF/Phosphoric Training Clean SNF Cleanroom Paul G Allen L107

Resist should have been removed

Matrix Plasma Resist Strip
matrix
Matrix Plasma Resist Strip Training Flexible SNF Cleanroom Paul G Allen L107

Single wafer tool with auto loading from a cassette. Pieces need a pocket carrier wafer for transport. Chuck temperature controls wafer heating.

EVG Contact Aligner
evalign
Contact Aligner EVG Training All SNF Cleanroom Paul G Allen L107

1:1 Contact Aligner.
Anodic Bond, backside align, including IR.

Heidelberg MLA 150 - 2
heidelberg2
Heidelberg Training All SNF Cleanroom Paul G Allen L107

Direct Write

Pages

Equipment name & NEMO ID Technique Cleaning Required Cleanliness Primary Materials Etched Other Materials Etched Material Thickness Range Materials Lab Supplied Resist Developer Process Temperature Range Gases Sample Size Limits Substrate Size Substrate Type Maximum Load
RTA AllWin 610
aw610_r
Flexible
21 °C - 1150 °C
,
,
Samco PC300 Plasma Etch System
samco
Flexible
20 ºC
,
,
,
,
,
,
,
,
,
,
,
,
,
Four 4" wafers or two 6" wafers and one 8" wafer
Savannah ALD
savannah
Flexible
1.00 Å - 50.00 nm
24 °C - 250 °C
,
,
,
,
,
,
,
,
,
,
,
,
SEM -Zeiss Merlin
sem-merlin
All
0.00 mm - 35.00 mm
6 in wafer ,
,
,
,
,
,
,
,
,
,
one
Sensofar S-neox
s-neox
All ,
,
,
,
,
,
,
,
1
SPTS uetch vapor etch
uetch
All ,
,
,
,
,
,
,
,
,
1
SVG Develop Track 1
svgdev
All
,
,
,
,
,
,
,
,
25 4 inch wafers
SVG Develop Track 2
svgdev2
All
,
,
,
,
,
,
,
,
25 4 inch wafers
SVG Resist Coat Track 1
svgcoat
All
,
,
,
,
,
,
,
,
25 4 inch wafers
SVG Resist Coat Track 2
svgcoat2
All
,
,
,
,
,
,
,
,
25 4 inch wafers
Tencor P2 Profilometer
p2
Clean, Semiclean ,
,
,
,
,
,
,
,
1
Tystar Bank 1 Tube 1 Anneal
B1T1 Flexible Oxide
Flexible
25.00 Å - 2.00 μm
400 °C - 1100 °C
,
,
100
Tystar Bank 1 Tube 2
B1T2 Flexible Oxide
Flexible
25.00 Å - 2.00 μm
400 °C - 1100 °C
,
,
100
Tystar Bank 1 Tube 3 Poly
B1T3 Flexible Poly
Flexible
25.00 Å - 2.00 μm
420 °C - 630 °C
,
,
,
,
,
100
Tystar Bank 1 Tube 4 LTO
B1T4 Flexible LTO
Flexible
25.00 Å - 2.00 μm
300 °C - 500 °C
,
,
,
,
,
100
Tystar Bank 2 Tube 5
B2T5 Clean Anneal
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
400 °C - 1100 °C
,
,
100
Tystar Bank 2 Tube 6
B2T6 Clean Oxide
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
400 °C - 1100 °C
,
,
100
Tystar Bank 2 Tube 7 Nitride
B2T7 Clean Nitride
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
420 °C - 800 °C
,
,
50
Tystar Bank 2 Tube 8 LTO
B2T8 Clean LTO
Clean
25.00 Å - 2.00 μm
300 °C - 500 °C
,
,
100
Tystar Bank 3 Tube 10 Nitride
B3T10 Clean Nitride
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
420 °C - 800 °C
,
,
50

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