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Pre-Diffusion Clean

More information is on the Processing Technique page for Pre-Diffusion Clean.

Following table is a list of all equipment which require a pre-diffusion clean.

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Equipment name & NEMO ID Technique Cleaning Required Cleanliness Material Thickness Range Materials Lab Supplied Process Temperature Range Gases Substrate Size Substrate Type Maximum Load
Aixtron MOCVD - III-V system
aix200
Pre-Diffusion Clean Flexible
0.00 - 5.00 μm
300 °C - 800 °C
(Si)
,
(SiO2)
,
(III-V)
,
(GaAs)
 4"x1 wafer or 2"x1 wafer or 4 pieces
AMAT Centurion Epitaxial System
epi2
Pre-Diffusion Clean Clean
50.00 Å - 3.00 μm
600 °C - 1200 °C
1
RTA AllWin 610
aw610_l
Pre-Diffusion Clean Clean
21 °C - 1150 °C
(Si)
,
(SiGe)
,
(SiO2)
 1 wafer
Tystar Bank 2 Tube 5
B2T5 Clean Oxide Anneal
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
400 °C - 1100 °C
(Si)
,
(SiGe)
,
(SiO2)
 100
Tystar Bank 2 Tube 6
B2T6 Clean Oxide
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
400 °C - 1100 °C
(Si)
,
(SiGe)
,
(SiO2)
 100
Tystar Bank 2 Tube 7 Nitride
B2T7 Clean Nitride
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
420 °C - 800 °C
(Si)
,
(SiGe)
,
(SiO2)
 50
Tystar Bank 3 Tube 10 Nitride
B3T10 Clean Nitride
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
420 °C - 800 °C
(Si)
,
(SiGe)
,
(SiO2)
 50
Tystar Bank 3 Tube 11 TEOS
B3T11 Clean TEOS
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
420 °C - 630 °C
(Si)
,
(SiGe)
,
(SiO2)
 50
Tystar Bank 3 Tube 12 Poly
B3T12 Clean Poly
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
420 °C - 630 °C
(Si)
,
(SiGe)
,
(SiO2)
 50
Tystar Bank 3 Tube 9
B3T9 Clean Oxide
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
400 °C - 1100 °C
(Si)
,
(SiGe)
,
(SiO2)
 100