Manual Film Thickness Measurement. Single or dual layer transparent films > 300 Ã
Direct Write
500Å to 300µm
Resist should have been removed
Single wafer tool with auto loading from a cassette. Pieces need a pocket carrier wafer for transport. Chuck temperature controls wafer heating.
Manual wet etching of non-standard materials. Hot plate available. GaAs allowed in personal labware only.
Isotropic Si etching; can be used for backside Si removal on small pieces
reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter
Manual wet etching of non-standard materials. Hot pots available. GaAs allowed in personal labware only
4" wafers; can be adopted to do 6" or 8" wafers; pieces need to be bonded to carrier wafers
For more than 300nm deposition, please contact Gabe Catalano <gcatalano@stanford.edu> in advance
