Restricted to non-conductive films only
For more than 300nm deposition, please contact Gabe Catalano <gcatalano@stanford.edu> in advance
Bakes wafers after resist coating.
Bakes wafers with resist after the development, called post-bake.
500Å to 300µm
5:1 reducing stepper
Convection in N2. Cure. Programmable.
CO2 drying after release of micromachined devices
Spray coating of resists
Adjustable spin speeds, spin time. SNF-acceptable resists or polymers. Ebeam resists
1:1 Contact Aligner. Backside align.
1:1 Contact Aligner. Backside align, including IR.
Single wafer etch with auto-loading from a cassette. Equipment originally used for gate etching with high selectivity to thin gate oxides.
